Fast Switching N Channel Power MOSFET MIRACLE POWER MPF09N20A 200V 9A Avalanche Tested Device
Key Attributes
Model Number:
MPF09N20A
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
280mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10.9pF
Input Capacitance(Ciss):
575pF
Output Capacitance(Coss):
54pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
13.9nC@10V
Mfr. Part #:
MPF09N20A
Package:
TO-220F
Product Description
Product Overview
The MPF09N20A is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring 200V, 9A, and a low RDS(ON) of 0.23 (typ.) at VGS = 10V. It offers fast switching and is 100% avalanche tested, making it suitable for high-efficiency switch mode power supplies, electronic lamp ballasts based on half bridge configurations, and UPS applications.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Miracle Technology
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| Voltage, Current, RDS(ON) | 200V | 9A | 0.23@VGS = 10V | |||
| Low Crss | ||||||
| Fast Switching | ||||||
| 100% Avalanche Tested | ||||||
| Application | ||||||
| High Efficiency Switch Mode Power Supplies | ||||||
| Electronic Lamp Ballasts Based On Half Bridge | ||||||
| UPS | ||||||
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 200 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 9 | A | |||
| ID | Drain Current-Continuous, TC =100C | 6 | A | |||
| IDM | Drain Current-Pulsed | 36 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 39 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 5 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 157 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 3.2 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 69 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 200 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 200V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250A | 2.0 | - | 4.0 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID = 4.5A | - | 0.23 | 0.28 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 100V, VGS = 0V, f = 1.0MHz | - | 575 | - | pF |
| Coss | Output Capacitance | - | 54 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 10.9 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 100V, ID =9A, VGS=10V | - | 8.8 | - | ns |
| tr | Turn-On Rise Time | - | 24 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 36 | - | ns | |
| tf | Turn-Off Fall Time | - | 26 | - | ns | |
| Qg | Total Gate Charge | VDS = 100V, ID =9A, VGS = 10V | - | 13.9 | - | nC |
| Qgs | Gate-Source Charge | - | 3.7 | - | nC | |
| Qgd | Gate-Drain Charge | - | 4.7 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 9 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 36 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 4.5A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IS=9A,VGS = 0V dIF/dt=100A/us | - | 132 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IS=9A,VGS = 0V dIF/dt=100A/us | - | 613 | - | nC |
2504151445_MIRACLE-POWER-MPF09N20A_C47361027.pdf
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