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quality 650V GaN FET transistor MIRACLE POWER MGZ18N65 suitable for power adapters lighting and SMPS applications factory
quality 650V GaN FET transistor MIRACLE POWER MGZ18N65 suitable for power adapters lighting and SMPS applications factory

650V GaN FET transistor MIRACLE POWER MGZ18N65 suitable for power adapters lighting and SMPS applications

Key Attributes
Model Number: MGZ18N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
13A
RDS(on):
150mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
1pF
Input Capacitance(Ciss):
598pF
Pd - Power Dissipation:
52W
Output Capacitance(Coss):
30pF
Gate Charge(Qg):
8nC
Mfr. Part #:
MGZ18N65
Package:
DFN8x8-3L
Product Description

Product Overview

The MGZ18N65 is a 650V Gallium Nitride (GaN) Field-Effect Transistor (FET) with enhancement mode operation. It features very low QRR and reduced crossover loss, making it easy to drive with commonly-used gate drivers. This FET enables AC-DC bridgeless totem-pole PFC designs, leading to increased power density, reduced system size and weight, and lower overall system cost. It achieves increased efficiency in both hard- and soft-switched circuits. Applications include power adapters, low power SMPS, and lighting.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: GaN FET
  • Mode: Enhancement Mode
  • Package: DFN8X8-3L

Technical Specifications

Parameter Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage (VDS) (Tc = 25C unless otherwise noted) - - 650 V
Transient Drain to Source Voltage (V(TR)DSS) a - - 800 V
Gate-Source Voltage (VGSS) - - 20 V
Maximum Power Dissipation (PD) @TC = 25C - - 52 W
Drain Current-Continuous (ID) TC = 25C b - - 13 A
Drain Current-Continuous (ID) TC = 100C b - - 8.4 A
Drain Current-Pulsed (IDM) Pulse Width = 10s - - 60 A
Operating Temperature (TC) Case -55 - +150 C
Operating Temperature (TJ) Junction -55 - +150 C
Storage Temperature (TS) -55 - +150 C
Soldering Peak Temperature (TSOLD) c - - 260 C
Thermal Characteristics
Thermal Resistance Junction-Case (RJC) - 2.4 - C/W
Thermal Resistance Junction-Ambient (RJA) d - 50 - C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
Reverse Breakdown Voltage (V(BL)DSS) VGS = 0V 650 - - V
Reverse Leakage Current (IDSS) VGS = 0V, VDS = 650V, TJ = 25C - 2.5 25 A
Reverse Leakage Current (IDSS) VGS = 0V, VDS = 650V, TJ = 150C - 10 - A
Gate-to-source Leakage Current (IGSS) VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
Gate Threshold Voltage (VGS(th)) VDS = VGS, ID =500A 3.3 4.0 4.8 V
On Resistance (RDS(on)eff) VGS = 10V, ID =8.5A, TJ = 25C - 150 180 m
On Resistance (RDS(on)eff) VGS = 10V, ID =8.5A, TJ = 150C - 307 - m
Dynamic Characteristics
Input Capacitance (CISS) VGS = 0 V, VDS = 400 V, f=1MHz - 598 - pF
Output Capacitance (COSS) - 30 - pF
Transfer Capacitance (CRSS) - 1 - pF
Output Capacitance, energy related (Co(er)) VGS = 0 V, VDS = 0~400 V - 43 - pF
Output Capacitance, time related (Co(tr)) - 85 - pF
On Characteristics
Turn-On Delay Time (td(on)) VGS = 0~12 V, VDS = 400 V , ID = 10 A , Rg = 70 - 13 - ns
Turn-On Rise Time (tr) - 25 - ns
Turn-Off Delay Time (td(off)) - 47 - ns
Turn-Off Fall Time (tf) - 34 - ns
Total Gate Charge (QG) VGS = 0~10 V, VDS = 400 V , ID = 8.5 A - 8.0 - nC
Gate-Source Charge (QGS) - 3.3 - nC
Gate-Drain Charge (QGD) - 2.0 - nC
Output Charge (QOSS) VGS=0V,VDS=0~400 V - 34 - nC
Drain-Source Diode Characteristics
Reverse Current (IS) VGS = 0 V - - 13 A
Reverse Voltage (VSD) VGS = 0V, IS = 10 A - 2.4 - V
Reverse Voltage (VSD) VGS = 0V, IS = 5 A - 1.6 - V
Reverse Recovery Time (tRR) IS = 10 A ,VDS= 400V, di/dt = 1000 A/s - 31 - ns
Reverse Recovery Charge (QRR) - 40 - nC

Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1s .
b. For increased stability at high current operation.
c. Reflow MSL3 .
d. Device on one layer epoxy PCB for drain connection (vertical and without air stream cooling, with 6cm copper area and 70m thickness).

Package Information: DFN8X8-3L

Revision History:
Version 0.1, Date 2021-12-10: Preliminary Version


2410122131_MIRACLE-POWER-MGZ18N65_C17702019.pdf

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