Low reverse transfer capacitance MOSFET MDD Microdiode Semiconductor MDD4N65D 650V N Channel device
Key Attributes
Model Number:
MDD4N65D
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.2pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
77W
Input Capacitance(Ciss):
600pF@25V
Gate Charge(Qg):
12nC
Mfr. Part #:
MDD4N65D
Package:
TO-252
Product Description
Product Overview
The MDD4N65F/MDD4N65P/MDD4N65D is a 650V N-Channel Enhancement Mode MOSFET offering ultra low gate charge, low reverse transfer capacitance, and fast switching capability. It is avalanche energy tested and features improved dv/dt capability for high ruggedness. This MOSFET is ideal for high efficiency switch mode power supplies, electronic lamp ballasts based on half bridge, and LED power supplies.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | VDS (V) | ID (Tc=25) (A) | RDS(on),max () | Qg,typ (nC) | Package |
| MDD4N65F | 650 | 4 | 2.8@VGS=10V | 12 | TO-220F-3L |
| MDD4N65P | 650 | 4 | 2.8@VGS=10V | 12 | TO-220-3L |
| MDD4N65D | 650 | 4 | 2.8@VGS=10V | 12 | TO-252 |
| Parameter | Symbol | TO-220F Value | TO-220/TO-252 Value | Unit |
| Thermal resistance, Junction-to-case | RJC | 3.8 | 1.62 | C/W |
| Thermal resistance, Junction-to-ambient | RJA | 110 | 62.5 | C/W |
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 650 | -- | -- | V |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | -- | -- | 100 | nA |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V | -- | -- | 1 | uA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 2.0 | 4.0 | -- | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2A | -- | 2.8 | -- | |
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | -- | 600 | -- | pF |
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | -- | 55 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | -- | 3.2 | -- | pF |
| Total Gate Charge | Qg | VDS=520V, VGS=10V, ID=4A | -- | 12 | -- | nC |
| Gate Source Charge | Qgs | VDS=520V, VGS=10V, ID=4A | -- | 3.2 | -- | nC |
| Gate Drain Charge | Qgd | VDS=520V, VGS=10V, ID=4A | -- | 5.1 | -- | nC |
| Turn on Delay Time | td(on) | VDS=325V, ID=4A, RG=10 | -- | -- | 12 | ns |
| Turn on Rise Time | tr | VDS=325V, ID=4A, RG=10 | -- | -- | 31 | ns |
| Turn Off Delay Time | td(off) | VDS=325V, ID=4A, RG=10 | -- | -- | 42 | ns |
| Turn Off Fall Time | tf | VDS=325V, ID=4A, RG=10 | -- | -- | 15 | ns |
| Source drain current(Body Diode) | ISD | -- | -- | 4 | -- | A |
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | -- | 1.5 | -- | V |
| Body Diode Reverse Recovery Time | trr | VR=400, IF=4A, -diF/dt =100A/s | -- | 0.8 | -- | ns |
| Body Diode Reverse Recovery Charge | Qrr | VR=400, IF=4A, -diF/dt =100A/s | -- | 282 | -- | uC |
2408090958_MDD-Microdiode-Semiconductor-MDD4N65D_C5299402.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
