MDD Microdiode Semiconductor MDD03N10C N Channel MOSFET Featuring Soft Body Diode and Pb Free Plating
Key Attributes
Model Number:
MDD03N10C
Product Custom Attributes
Mfr. Part #:
MDD03N10C
Package:
SOT-23-3
Product Description
Product Overview
This N-Channel MOSFET, utilizing MDD Semiconductor's advanced Power Trench process technology, is optimized for minimal on-state resistance and superior switching performance. It features a best-in-class soft body diode and is Pb-free plated. Ideal for load switches, PWM applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: MDD Semiconductor
- Origin: Shenzhen
- Material: Advanced Power Trench process technology
- Certifications: Pb-free plating
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Note 1) | ID | TA=25°C unless otherwise noted | 3 | A | ||
| Pulsed Drain Current (Note 2) | IDM | TA=25°C unless otherwise noted | 12 | A | ||
| Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Thermal Resistance, steady-state | RθJA | 156 | °C/W | |||
| Electrical Characteristics | ||||||
| Gate-Source Leakage Current | IGSS | VGS = ±20V | ±100 | nA | ||
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | 1.0 | μA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 2.0 | V | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=3A | 120 | 155 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=1A | 18 | mΩ | ||
| Source Drain Diode Forward Voltage | VSD | IS=3A, VGS=0V | 1.2 | V | ||
| Body Diode Reverse Recovery Time | trr | IS=3A, di/dt=100A/μs | 15 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | VGS=0V, IF=3A, di/dt=100A/μs | 5.8 | nC | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1.0MHz | 810 | pF | ||
| Output Capacitance | Coss | VDS=50V, VGS=0V, f=1.0MHz | 28 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=50V, VGS=0V, f=1.0MHz | 18 | pF | ||
| Total Gate Charge | Qg | VDS=50V, ID=3A, VGS=0-10V | 23 | nC | ||
| Gate Source Charge | Qgs | VDS=50V, ID=3A, VGS=0-10V | 4.6 | nC | ||
| Gate Drain Charge | Qgd | VDS=50V, ID=3A, VGS=0-10V | 3.2 | nC | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDD=10V, ID=3A, RG=3Ω | 4.8 | ns | ||
| Turn on Rise Time | tr | VDD=10V, ID=3A, RG=3Ω | 5.8 | ns | ||
| Turn Off Delay Time | td(off) | VDD=10V, ID=3A, RG=3Ω | 3.3 | ns | ||
| Turn Off Fall Time | tf | VDD=10V, ID=3A, RG=3Ω | 23 | ns | ||
2510161110_MDD-Microdiode-Semiconductor-MDD03N10C_C52118353.pdf
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