MDD Microdiode Semiconductor BSS84 P Channel Enhancement Mode MOSFET with Trench Power LV Technology
Key Attributes
Model Number:
BSS84
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
170mA
Operating Temperature -:
-50℃~+150℃
RDS(on):
9.9Ω@4.5V,150mA
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
1.8pF
Number:
1 P-Channel
Input Capacitance(Ciss):
43pF@30V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.77nC@30V
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description
Product Overview
The BSS84 is a -60V P-Channel Enhancement Mode MOSFET designed with Trench Power LV MOSFET technology. It offers low RDS(ON) and low Gate Charge, making it suitable for applications such as video monitors and power management. Its features include a compact SOT-23 package.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -170 | mA | |||
| Power Dissipation | PD | (Note 2) | 350 | mW | ||
| Thermal Resistance from Junction to Ambient | RJA | (Note 2) | 357 | /W | ||
| Junction Temperature and Storage Temperature | TJ,Tstg | -50 | 150 | |||
| Pulsed Drain Current | IDM | (Note 1) | 1.2 | A | ||
| Electrical Characteristics (Ta = 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250A | -60 | V | ||
| Gate-Source Leakage Current | IDSS | VDS=-60V, VGS=0V | -1 uA | |||
| Drain-Source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -0.9 | -2.0 | V | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-150mA (Note 3) | 8 | |||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-150mA (Note 3) | 9.9 | |||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDS=-30V, VGS =-4.5V, ID=-150mA, RG=2.5 | 8.6 | ns | ||
| Turn on Rise Time | tr | 20 | ns | |||
| Turn Off Delay Time | td(off) | 15 | ns | |||
| Turn Off Fall Time | tf | 77 | ns | |||
| Source Drain Diode Characteristics | ||||||
| Source drain current (Body Diode) | ISD | -170 | mA | |||
| Drain-Source Diode Forward Voltage | VSD | IS=-170mA, VGS=0V | -1.2 | V | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 43 | pF | ||
| Output Capacitance | Coss | 2.9 | pF | |||
| Reverse Transfer Capacitance | Crss | 1.8 | pF | |||
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-150mA | 1.77 | nC | ||
| Gate Source Charge | Qgs | 0.57 | nC | |||
| Gate Drain Charge | Qgd | 0.18 | nC | |||
2407101112_MDD-Microdiode-Semiconductor-BSS84_C427395.pdf
Related Products
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
