Microdiode Semiconductor MDD05N40A 40V N Channel MOSFET with Fast Switching and High Current Capability
Key Attributes
Model Number:
MDD05N40A
Product Custom Attributes
Mfr. Part #:
MDD05N40A
Package:
SOT-23-3
Product Description
MDD05N40A 40V N-Channel Enhancement Mode MOSFET
The MDD05N40A is a 40V N-channel MOSFET designed with a unique device architecture for low RDS(ON), fast switching, and excellent avalanche characteristics. It is ideal for load switching in portable devices, battery-powered systems, DC-DC converters, LCD display inverters, and other portable equipment. Key features include a high-density cell design for extremely low RDS(ON) and exceptional on-resistance and maximum DC current capability.
Product Attributes
- Brand: Microdiode
- Origin: Shenzhen
- Model: MDD05N40A
- Type: N-Channel Enhancement Mode MOSFET
- Voltage Rating: 40V
Technical Specifications
| Parameter | Symbol | Condition | Unit | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | V | 40 | |||
| Gate-Source Voltage | VGS | V | -20 | +20 | ||
| Continuous Drain Current (Note 1) | ID | TA=25C | A | 5 | ||
| Pulsed Drain Current (Note 1) | IDM | A | 20 | |||
| Power Dissipation (Note 2) | PD | TA=25C | W | 1.2 | ||
| Thermal Resistance, Junction-Ambient (Note 2) | RJA | Surface Mounted on FR4 Board, t10 sec. | C/W | 100 | ||
| Junction Temperature | TJ | C | -55 | +150 | ||
| Storage Temperature | Tstg | C | -55 | +150 | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250A | V | 40 | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | nA | 100 | ||
| Drain-Source Leakage Current | IDSS | VDS=40V, VGS=0V | A | 1 | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | V | 2.2 | 3 | 4 |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=4A | m | 34 | 44 | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=3A | m | 34 | ||
| Switching Characteristics | ||||||
| Turn on Delay Time | td(on) | VDD =10V, ID=5A, RG=2.2, VGS=10V | ns | 8 | ||
| Turn on Rise Time | tr | ns | 13 | |||
| Turn Off Fall Time | tf | ns | 2 | |||
| Turn Off Delay Time | td(off) | ns | 20 | |||
| Source Drain Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | IS=5A, VGS=0V | V | 1.2 | ||
| Body Diode Reverse Recovery Time | trr | IF=5A, di/dt=100A/s | ns | 19 | 26 | |
| Body Diode Reverse Recovery Charge | Qrr | IF=5A, di/dt=100A/s | nC | 370 | ||
| Dynamic Electrical Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V, VGS=0V, f=1.0MHz | pF | 370 | ||
| Output Capacitance | Coss | pF | 50 | |||
| Reverse Transfer Capacitance | Crss | pF | 38 | |||
| Total Gate Charge | Qg | VDS=20V, ID=5A, VGS=0-10V | nC | 11 | ||
| Gate Source Charge | Qgs | VDS=20V, ID=5A, VGS=0-10V | nC | 3 | ||
| Gate Drain Charge | Qgd | VDS=20V, ID=5A, VGS=0-10V | nC | 2 | ||
2512021845_MDD-Microdiode-Semiconductor-MDD05N40A_C53069226.pdf
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