Optimized drain source diode and low gate charge in MICROCHIP APT13F120B Power MOSFET for switching
Key Attributes
Model Number:
APT13F120B
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
14A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
5V
Number:
1 N-channel
Input Capacitance(Ciss):
4.765nF@25V
Pd - Power Dissipation:
625W
Gate Charge(Qg):
145nC@10V
Mfr. Part #:
APT13F120B
Package:
TO-247
Product Description
Product Overview
The APT13F120B and APT13F120S are N-Channel FREDFET Power MOSFETs designed for high-speed switching applications. These devices feature optimized drain-source diodes with reduced reverse recovery time (trr) and soft recovery for enhanced reliability in ZVS phase-shifted bridge and other power converter circuits. Key advantages include low gate charge, high gain, excellent noise immunity due to a reduced Crss/Ciss ratio, and avalanche energy rating. The integrated gate resistance and capacitance contribute to controlled di/dt, low EMI, and reliable paralleling at high frequencies.
Product Attributes
- Brand: Microsemi
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Unit | Min | Typ | Max | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Continuous Drain Current @ TC = 25C | ID | A | 14 | TC = 25C | ||
| Continuous Drain Current @ TC = 100C | ID | A | 9 | TC = 100C | ||
| Pulsed Drain Current | IDM | A | 50 | |||
| Gate-Source Voltage | VGS | V | -30 | +30 | ||
| Single Pulse Avalanche Energy | EAS | mJ | 625 | |||
| Avalanche Current, Repetitive or Non-Repetitive | IAR | A | 14 | |||
| Total Power Dissipation @ TC = 25C | PD | W | 300 | TC = 25C | ||
| Junction to Case Thermal Resistance | RJC | C/W | 0.20 | |||
| Case to Sink Thermal Resistance, Flat, Greased Surface | RCS | C/W | 0.11 | |||
| Operating and Storage Junction Temperature Range | TJ,TSTG | C | -55 | 150 | ||
| Soldering Temperature for 10 Seconds (1.6mm from case) | TL | C | 300 | 1.6mm from case | ||
| Package Weight | WT | g | 0.22 | |||
| Mounting Torque (TO-247 Package), 6-32 or M3 screw | Torque | inlbf / Nm | 6.2 / 10 | 1.1 | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | VBR(DSS) | V | 1200 | VGS = 0V, ID = 250A | ||
| Breakdown Voltage Temperature Coef cient | VBR(DSS)/TJ | V/C | 1.41 | Reference to 25C, ID = 250A | ||
| Drain-Source On Resistance | RDS(on) | 0.91 | 1.2 | VGS = 10V, ID = 7A | ||
| Gate-Source Threshold Voltage | VGS(th) | V | 2.5 | 4 | VGS = VDS, ID = 1mA | |
| Threshold Voltage Temperature Coef cient | VGS(th)/TJ | mV/C | -10 | |||
| Zero Gate Voltage Drain Current | IDSS | A | 250 | VDS = 1200V, TJ = 25C | ||
| Gate-Source Leakage Current | IGSS | nA | 100 | VGS = 30V | ||
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (Body Diode) | IS | A | 14 | |||
| Pulsed Source Current (Body Diode) | ISM | A | 50 | |||
| Diode Forward Voltage | VSD | V | 1.12 | 3.03 | ISD = 7A, TJ = 25C, VGS = 0V | |
| Reverse Recovery Time | trr | ns | 250 | ISD = 7A, TJ = 25C, diSD/dt = 100A/s | ||
| Reverse Recovery Charge | Qrr | C | 520 | ISD = 7A, TJ = 25C, diSD/dt = 100A/s | ||
| Reverse Recovery Current | Irrm | A | 10 | 13.5 | ISD = 7A, TJ = 25C, diSD/dt = 100A/s | |
| Peak Recovery dv/dt | dv/dt | V/ns | 25 | ISD 7A, di/dt 1000A/s, VDD = 800V, TJ = 125C | ||
| Dynamic Characteristics | ||||||
| Forward Transconductance | gfs | S | 15 | VDS = 50V, ID = 7A | ||
| Input Capacitance | Ciss | pF | 4765 | VGS = 0V, VDS = 25V, f = 1MHz | ||
| Reverse Transfer Capacitance | Crss | pF | 55 | |||
| Output Capacitance | Coss | pF | 350 | |||
| Effective Output Capacitance, Charge Related | Co(cr) | pF | 135 | VGS = 0V, VDS = 0V to 800V | ||
| Effective Output Capacitance, Energy Related | Co(er) | pF | 70 | |||
| Total Gate Charge | Qg | nC | 145 | VGS = 0 to 10V, ID = 7A, VDS = 600V | ||
| Gate-Source Charge | Qgs | nC | 24 | |||
| Gate-Drain Charge | Qgd | nC | 70 | |||
| Turn-On Delay Time | td(on) | ns | 26 | VDD = 800V, ID = 7A, RG = 4.7, VGG = 15V | ||
| Current Rise Time | tr | ns | 15 | |||
| Turn-Off Delay Time | td(off) | ns | 85 | |||
| Current Fall Time | tf | ns | 24 | |||
2411220332_MICROCHIP-APT13F120B_C7459171.pdf
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