power MOSFET Megain MGV022N14N featuring low thermal resistance and avalanche tested for energy inverters
Key Attributes
Model Number:
MGV022N14N
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
315A
RDS(on):
2.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Output Capacitance(Coss):
3.54nF
Input Capacitance(Ciss):
8.292nF
Pd - Power Dissipation:
400W
Gate Charge(Qg):
1.35uC@70V
Mfr. Part #:
MGV022N14N
Package:
TOLL
Product Description
Product Overview
The MGV022N14N is a high-performance N-channel MOSFET designed for demanding applications. It features low on-state resistance (RDS(ON)), low gate charge, and low thermal resistance, making it highly efficient. The device is 100% avalanche tested and offers excellent decline in CdV/dt effect. It is ideal for load switching, battery protection, and use in UPS and energy inverters.
Product Attributes
- Brand: Megain
- Model: MGV022N14N
- Package Type: TOLL
- Ordering Information: MGV022N14N
- Marking: MGV022N14N
- Quantity per Reel: 2000 PCS
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDS | Drain-Source Voltage | 135 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current Continuous (TC=25) | 315 | A | |||
| ID | Drain Current Continuous (TC=100) | 220 | A | |||
| IDM | Pulsed Drain Current | 1250 | A | |||
| EAS | Single Pulse Avalanche Energy | 1680 | mJ | |||
| PD | Total Power Dissipation (TC=25C) | 400 | W | |||
| PD | Total Power Dissipation (TC=100C) | 200 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction to Ambient | - | - | 60 | /W | |
| RJC | Thermal Resistance Junction to Case | - | - | 0.35 | /W | |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 140 | - | - | V |
| RDS(ON) | Drain-Source On-state Resistance | VGS=10V, ID=20A | - | 2.2 | 3.3 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | - | 4.0 | V |
| IDSS | Drain-Source Leakage Current | VDS=135V, VGS=0V | - | - | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V, VDS=0V | - | - | 100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=10A | - | 32 | - | S |
| Rg | Gate resistance | VGS=0V, VDS=0V F=1.0MHz | - | 0.9 | - | |
| Qg | Total Gate Charge | VDS=10V, VGS=70V ID=50A | - | 1350 | - | nC |
| Qgs | Gate-Source Charge | - | 30 | - | ||
| Qgd | Gate-Drain Charge | - | 30 | - | ||
| Td(ON) | Turn-on Delay Time | VDS=70V, VGS=10V, RGEN=4.5,ID=50A | - | 1 | - | nS |
| Tr | Turn-on Rise Time | - | 33 | - | ||
| Td(OFF) | Turn-off Delay Time | - | 95 | - | ||
| Tf | Turn-off Fall Time | - | 75 | - | ||
| Ciss | Input Capacitance | VDS=40V, VGS=0V, f=1MHz | - | 8292 | - | pF |
| Coss | Output Capacitance | - | 3540 | - | ||
| Crss | Reverse Transfer Capacitance | - | 350 | - | ||
| ISD | Source-Drain Current(Body Diode) | - | - | 315 | A | |
| VSD | Diode Forward Voltage | IS=15A,VGS=0V | - | - | 1.2 | V |
| trr | Reverse Recovery Time | IF=50A, dl/dt=100A/us TJ=25 | - | 130 | - | nS |
| Qrr | Reverse Recovery Charge | - | 500 | - | nC |
2506251635_Megain-MGV022N14N_C49242763.pdf
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