Power MOS 7 N Channel MOSFET MICROCHIP APT7M120B with 1200 Volt Drain Source Breakdown Voltage
Key Attributes
Model Number:
APT7M120B
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
22A
Operating Temperature -:
-55℃~+150℃
RDS(on):
570mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@2.5mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
1 N-channel
Output Capacitance(Coss):
1.08nF
Pd - Power Dissipation:
690W
Input Capacitance(Ciss):
6.2nF
Gate Charge(Qg):
290nC@10V
Mfr. Part #:
APT7M120B
Package:
TO-247-3
Product Description
Product Overview
The APT12057B2LL(G) and APT12057LLL(G) are N-Channel enhancement mode power MOSFETs from the Power MOS 7 family. They offer a new generation of low loss, high voltage performance by significantly lowering RDS(ON) and Qg, resulting in reduced conduction and switching losses. These MOSFETs feature an exceptionally fast switching speed due to APT's patented metal gate structure and are available in popular T-MAX or TO-264 packages.
Product Attributes
- Brand: APT
- Technology: Power MOS 7
- Terminal Finish: RoHS Compliant, Pb Free (G Denotes)
- Package Options: T-MAX (B2LL), TO-264 (LLL)
Technical Specifications
| Characteristic | Symbol | MIN | TYP | MAX | UNIT | Test Conditions |
| STATIC ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 1200 | Volts | VGS = 0V, ID = 250A | ||
| On State Drain Current | ID(on) | 22 | Amps | VDS > ID(on) x RDS(on) Max, VGS = 10V | ||
| Drain-Source On-State Resistance | RDS(on) | 0.570 | 0.88 | Ohms | VGS = 10V, 0.5 ID[Cont.] | |
| Zero Gate Voltage Drain Current | IDSS | 100 | A | VDS = VDSS, VGS = 0V | ||
| Zero Gate Voltage Drain Current | IDSS | 500 | A | VDS = 0.8 VDSS, VGS = 0V, TC = 125C | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS = 30V, VDS = 0V | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | Volts | VDS = VGS, ID = 2.5mA | |
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | 5155 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Output Capacitance | Coss | 6200 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Reverse Transfer Capacitance | Crss | 770 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Total Gate Charge | Qg | 1080 | nC | VGS = 10V, ID = ID[Cont.] @ 25C | ||
| Gate-Source Charge | Qgs | 130 | nC | VGS = 10V, ID = ID[Cont.] @ 25C | ||
| Gate-Drain ("Miller") Charge | Qgd | 187 | nC | VGS = 10V, ID = ID[Cont.] @ 25C | ||
| Turn-on Delay Time | td(on) | 24 | ns | VGS = 15V, VDD = 0.5 VDSS, ID = ID[Cont.] @ 25C, RG = 0.6 | ||
| Rise Time | tr | 120 | ns | VGS = 15V, VDD = 0.5 VDSS, ID = ID[Cont.] @ 25C, RG = 0.6 | ||
| Turn-off Delay Time | td(off) | 11 | ns | VGS = 15V, VDD = 0.5 VDSS, ID = ID[Cont.] @ 25C, RG = 0.6 | ||
| Fall Time | tf | 21 | ns | VGS = 15V, VDD = 0.5 VDSS, ID = ID[Cont.] @ 25C, RG = 0.6 | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Source Current | IS | 22 | Amps | |||
| Pulsed Source Current | ISM | 88 | Amps | 1 | ||
| Diode Forward Voltage | VSD | 1.3 | Volts | VGS = 0V, IS = -ID[Cont.] | ||
| Reverse Recovery Time | trr | 1291 | ns | IS = -ID[Cont.], dlS/dt = 100A/s | ||
| Reverse Recovery Charge | Qrr | 29 | C | IS = -ID[Cont.], dlS/dt = 100A/s | ||
| Peak Diode Recovery dv/dt | dv/dt | 10 | V/ns | 5 | ||
| MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | 1200 | Volts | TC = 25C unless otherwise specified. | ||
| Continuous Drain Current | ID | 22 | Amps | @ TC = 25C | ||
| Pulsed Drain Current | IDM | 88 | Amps | 1 | ||
| Gate-Source Voltage | VGS | 30 | Volts | |||
| Continuous Gate-Source Voltage | VGSM | 40 | Volts | Transient | ||
| Total Power Dissipation | PD | 690 | Watts | @ TC = 25C | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Lead Temperature | TL | 300 | C | 0.063" from Case for 10 Sec. | ||
| Avalanche Current | IAR | 22 | Amps | 1 | ||
| Repetitive Avalanche Energy | EAR | 50 | mJ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 3000 | mJ | 4 | ||
| THERMAL CHARACTERISTICS | ||||||
| Junction to Case | RJC | 0.18 | C/W | |||
| Junction to Ambient | RJA | 40 | C/W | |||
2410121845_MICROCHIP-APT7M120B_C3293089.pdf
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