High Frequency Power Supply Diode Minos MBRF10200CT with Low Reverse Leakage and High Surge Capacity
Product Overview
The MBRF10200CT is a SBD Schottky Barrier Diode designed for high-frequency switched mode power supplies. It is optimized for low forward voltage and low reverse leakage current, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity. This diode is ideal for applications requiring efficient and reliable power conversion.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen, China (derived from contact information)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | |
| Continuous forward current | IF(AV) | TA=110 | 10 | A |
| Single pulse forward current | IFSM | TA=25 | 150 | A |
| Maximum repetitive forward current | IFRM | Square wave, 20kHZ | 25 | A |
| Operating junction temperature | Tj | 150 | ||
| Storage temperatures | Tstg | -55 to +175 | ||
| Breakdown voltage / Blocking voltage | VBR | VR = IR=100A | 200 | V |
| Forward voltage | VF | IF=3.0A | 0.79 - 0.85 | V |
| IF=5.0A | 0.86 - 0.93 | |||
| IF=3.0A, Tj =125 | 0.69 - 0.80 | |||
| IF=5.0A, Tj =125 | 0.74 - 0.85 | |||
| Reverse leakage current | IR | VR= VRRM | 10 | A |
| Tj=125, VR=200V | 2000 | |||
| Junction-to-Case Thermal Resistance | RthJC | 4.2 | /W |
Package Description (TO-220F)
| Symbol | MIN | MAX | Values(mm) |
|---|---|---|---|
| A | 4.35 | 4.75 | |
| A1 | 2.30 | 2.70 | |
| A2 | 0.40 | 0.80 | |
| A3 | 2.10 | 2.50 | |
| b | 0.60 | 1.00 | |
| b1 | 1.00 | 1.40 | |
| c | 0.30 | 0.70 | |
| e | 2.30 | 2.70 | |
| E | 9.80 | 10.2 | |
| E1 | 6.30 | 6.70 | |
| H | 15.6 | 16.0 | |
| H1 | 8.80 | 9.20 | |
| H2 | 12.9 | 13.5 | |
| H3 | 3.10 | 3.50 | |
| G | 3.10 | 3.50 | |
| p | 3.10 | 3.50 |
2506271720_Minos-MBRF10200CT_C49260731.pdf
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