High Frequency Power Supply Diode Minos MBRF10200CT with Low Reverse Leakage and High Surge Capacity

Key Attributes
Model Number: MBRF10200CT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
10uA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
930mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBRF10200CT
Package:
TO-220F
Product Description

Product Overview

The MBRF10200CT is a SBD Schottky Barrier Diode designed for high-frequency switched mode power supplies. It is optimized for low forward voltage and low reverse leakage current, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity. This diode is ideal for applications requiring efficient and reliable power conversion.

Product Attributes

  • Brand: MNS (derived from www.mns-kx.com)
  • Origin: Shenzhen, China (derived from contact information)

Technical Specifications

ParameterSymbolTest ConditionsValuesUnits
Repetitive peak reverse voltageVRRM200V
Continuous forward currentIF(AV)TA=11010A
Single pulse forward currentIFSMTA=25150A
Maximum repetitive forward currentIFRMSquare wave, 20kHZ25A
Operating junction temperatureTj150
Storage temperaturesTstg-55 to +175
Breakdown voltage / Blocking voltageVBRVR = IR=100A200V
Forward voltageVFIF=3.0A0.79 - 0.85V
IF=5.0A0.86 - 0.93
IF=3.0A, Tj =1250.69 - 0.80
IF=5.0A, Tj =1250.74 - 0.85
Reverse leakage currentIRVR= VRRM10A
Tj=125, VR=200V2000
Junction-to-Case Thermal ResistanceRthJC4.2/W

Package Description (TO-220F)

SymbolMINMAXValues(mm)
A4.354.75
A12.302.70
A20.400.80
A32.102.50
b0.601.00
b11.001.40
c0.300.70
e2.302.70
E9.8010.2
E16.306.70
H15.616.0
H18.809.20
H212.913.5
H33.103.50
G3.103.50
p3.103.50

2506271720_Minos-MBRF10200CT_C49260731.pdf

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