Power Schottky Barrier Rectifier Minos MBRF30100CT for Low Voltage High Frequency Inverter Circuits
Product Overview
This is a power Schottky barrier rectifier designed for low-voltage, high-frequency inverter circuits, freewheeling circuits, and protection circuits. It offers efficient rectification and is suitable for various electronic applications.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen, China
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
| Storage Temperature | Tstg | Storage Temperature | -65 | 175 | |||
| Junction Temperature | Tj | Junction Temperature | -65 | 150 | |||
| Maximum Repetitive Peak Reverse Voltage | VRRM | Maximum Repetitive Peak Reverse Voltage | 100 | V | |||
| Peak Working Reverse Voltage | VRWM | Peak Working Reverse Voltage | 100 | V | |||
| Reverse Working Voltage (RMS) | VR(RMS) | Reverse Working Voltage (RMS) | 70 | V | |||
| Maximum DC Reverse Voltage | VR | Maximum DC Reverse Voltage | 100 | V | |||
| Maximum Average Forward Current (Tc=125) | IF(AV) | Maximum Average Forward Current (Tc=125) | 15 | A | Single Device | ||
| Maximum Average Forward Current (Tc=125) | IF(AV) | Maximum Average Forward Current (Tc=125) | 30 | A | Whole Device | ||
| Forward Peak Surge Current (Single Device, 60HZ) | IFSM | Forward Peak Surge Current (Single Device, 60HZ) | 200 | A | |||
| Reverse Transient Current | IR | Reverse Transient Current | 0.5 | mA | VR=VRRM, TC = 25 C | ||
| Reverse Transient Current | IR | Reverse Transient Current | mA | TC= 125 C | |||
| Forward Transient Peak Voltage Drop | VF | Forward Transient Peak Voltage Drop | 0.70 | 0.84 | V | IF= 15 A, TC= 25 C (Note 1) | |
| Forward Transient Peak Voltage Drop | VF | Forward Transient Peak Voltage Drop | 0.70 | 0.94 | V | IF= 15 A, TC= 125 C | |
| Forward Transient Peak Voltage Drop | VF | Forward Transient Peak Voltage Drop | 0.82 | 0.94 | V | IF= 30 A, TC = 25 C | |
| Forward Transient Peak Voltage Drop | VF | Forward Transient Peak Voltage Drop | 0.82 | 0.94 | V | IF= 30 A, TC = 125 C | |
| Thermal Resistance (Junction to Case per pin) | Rth(j-c) | Thermal Resistance (Junction to Case per pin) | 4.0 | /W | |||
| Junction Capacitance | Cj | Junction Capacitance (Note 2) | 1000 | pF | f=1MHz, VR=4V | ||
| Rate of Voltage Slew | dV/dt | Rate of Voltage Slew | 10000 | V/s | |||
| Insulation Voltage (Heat sink to surface, t=3 sec) | VISO | Insulation Voltage (Heat sink to surface, t=3 sec) | 2000 | V |
Note 1: Pulse test, pulse width 300S, duty cycle 2%.
Note 2: Test conditions f=1MHz VR=4V.
Contact Information
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2411120955_Minos-MBRF30100CT_C5366129.pdf
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