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quality NPN switching transistor Nexperia PMBT3904 215 with 40 volt collector emitter voltage in compact SOT23 factory
quality NPN switching transistor Nexperia PMBT3904 215 with 40 volt collector emitter voltage in compact SOT23 factory

NPN switching transistor Nexperia PMBT3904 215 with 40 volt collector emitter voltage in compact SOT23

Key Attributes
Model Number: PMBT3904,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBT3904,215
Package:
SOT-23
Product Description

Nexperia PMBT3904: 40 V, 200 mA NPN Switching Transistor

Product Overview

The Nexperia PMBT3904 is an NPN switching transistor designed for general switching and amplification applications. Encased in a compact SOT23 surface-mounted device (SMD) plastic package, this transistor offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. It is AEC-Q101 qualified, making it suitable for automotive applications. Its PNP complement is the PMBT3906.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23
  • Qualification: AEC-Q101
  • Transistor Type: NPN Switching

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 40 V
IC Collector current - - - 200 mA
hFE DC current gain VCE = 1 V; IC = 10 mA 100 - 300 [1]
VCBO Collector-base voltage open emitter - - 60 V
VEBO Emitter-base voltage open collector - - 6 V
ICM Peak collector current - - - 200 mA
IBM Peak base current single pulse; tp 1 ms - - 100 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient [1] - - 500 K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 50 nA
IEBO Emitter-base cut-off current VEB = 6 V; IC = 0 A - - 50 nA
hFE DC current gain VCE = 1 V; IC = 0.1 mA [1] 60 - - V
hFE DC current gain VCE = 1 V; IC = 1 mA [1] 80 - - V
hFE DC current gain VCE = 1 V; IC = 10 mA [1] 100 - 300 [1]
hFE DC current gain VCE = 1 V; IC = 50 mA [1] 60 - - -
hFE DC current gain VCE = 1 V; IC = 100 mA [1] 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA - - 200 mV
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 5 mA - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 1 mA 650 - 850 mV
VBEsat Base-emitter saturation voltage IC = 50 mA; IB = 5 mA - - 950 mV
td Delay time - - - 35 ns
tr Rise time - - - 35 ns
ts Storage time - - - 200 ns
tf Fall time IC = 10 mA; IBon = 1 mA; IBoff = -1 mA - - 50 ns
Cc Collector capacitance VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 4 pF
Ce Emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz - - 8 pF
fT Transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz 300 - - MHz
NF Noise figure VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz - - 5 dB

[1] Pulsed test: tp 300 s; 0.02

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.


2410122030_Nexperia-PMBT3904-215_C8667.pdf
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