High Breakdown Voltage N Channel Vertical DMOS FET MICROCHIP TN5325K1-G with Silicon Gate Technology
Key Attributes
Model Number:
TN5325K1-G
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
150mA
Operating Temperature -:
-55℃~+150℃@(Ta)
RDS(on):
7Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Pd - Power Dissipation:
360mW
Input Capacitance(Ciss):
110pF@25V
Mfr. Part #:
TN5325K1-G
Package:
SOT-23-3
Product Description
Product Overview
The TN5325 is a low-threshold, N-Channel Enhancement-Mode Vertical DMOS FET utilizing a vertical DMOS structure and silicon gate manufacturing. It offers the power handling of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and secondary breakdown, making it suitable for switching and amplifying applications requiring low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds.
Product Attributes
- Brand: Microchip Technology Inc.
- Material: Silicon Gate
- Certifications: Pb-free (JEDEC designator for Matte Tin (Sn))
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-source Voltage | BVDSX | V | ||||
| Drain-to-gate Voltage | BVDGX | V | ||||
| Gate-to-source Voltage | 20 | V | ||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| DC Electrical Characteristics | ||||||
| Drain-to-source Breakdown Voltage | BVDSS | 250 | V | VGS = 0V, ID = 100 A | ||
| Gate Threshold Voltage | VGS(th) | 0.6 | 2 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 4.5 | mV/C | VGS = VDS, ID = 1 mA (Note 2) | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V | ||
| Zero-gate Voltage Drain Current | IDSS | 1 | A | VGS = 0V, VDS = 100V | ||
| 10 | VGS = 0V, VDS = Maximum Rating | |||||
| 1 | mA | VDS = 0.8 Maximum Rating, VGS = 0V, TA = 125C (Note 2) | ||||
| On-state Drain Current | ID(ON) | 0.6 | A | VGS = 4.5V, VDS = 25V | ||
| 1.2 | A | VGS = 10V, VDS = 25V | ||||
| Static Drain-to-source On-state Resistance | RDS(ON) | 8 | VGS = 4.5V, ID = 150 mA | |||
| 7 | VGS = 10V, ID = 1A | |||||
| Change in RDS(ON) with Temperature | RDS(ON) | 1 | %/C | VGS = 4.5V, ID = 150 mA (Note 2) | ||
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 150 | mmho | VDS = 25V, ID = 200 mA | ||
| Input Capacitance | CISS | 110 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Common Source Output Capacitance | COSS | 60 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Reverse Transfer Capacitance | CRSS | 23 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | ||
| Turn-on Delay Time | td(ON) | 20 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | ||
| Rise Time | tr | 15 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | ||
| Turn-off Delay Time | td(OFF) | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | ||
| Fall Time | tf | 25 | ns | VDD = 25V, ID = 150 mA, RGEN = 25 | ||
| Diode Parameter | ||||||
| Diode Forward Voltage Drop | VSD | 1.8 | V | VGS = 0V, ISD = 200 mA (Note 1) | ||
| Reverse Recovery Time | trr | 300 | ns | VGS = 0V, ISD = 200 mA (Note 2) | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| Thermal Characteristics | ||||||
| Package | ||||||
| 3-lead SOT-23 | JA | 350 | C/W | |||
| JC | 200 | C/W | ||||
| 3-lead TO-92 | JA | 170 | C/W | |||
| JC | 125 | C/W | ||||
| 3-lead SOT-89 | JA | 78 | C/W | Note 1 | ||
| JC | 15 | C/W | Note 1 | |||
| Thermal Characteristics (Power Dissipation) | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (A) | Power Dissipation at TA = 25C (W) | IDR (mA) | IDRM (A) | |
| 3-lead SOT-23 | 150 | 0.4 | 0.36 | 150 | 0.4 | |
| 3-lead TO-92 | 215 | 0.8 | 0.74 | 215 | 0.8 | |
| 3-lead SOT-89 | 316 | 1.5 | 1.6 (Note 2) | 316 | 1.5 | |
Applications
- Logic-level Interfaces (Ideal for TTL and CMOS)
- Solid State Relays
- Battery-operated Systems
- Photo-voltaic Drives
- Analog Switches
- General Purpose Line Drivers
- Telecommunication Switches
2411220221_MICROCHIP-TN5325K1-G_C626653.pdf
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