Minos MPT015N10 T Power MOSFET N channel Optimized for Battery Management and High Current Switching
Key Attributes
Model Number:
MPT015N10-T
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
480A
RDS(on):
1.12mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
105pF
Input Capacitance(Ciss):
11.679nF
Pd - Power Dissipation:
432W
Output Capacitance(Coss):
2.684nF
Gate Charge(Qg):
203nC@10V
Mfr. Part #:
MPT015N10-T
Package:
TOLL-8
Product Description
Product Overview
The MPT015N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy capabilities. It is ideally suited for Battery Management Systems (BMS) and high current switching applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS product
Technical Specifications
| Parameter | Value | Unit | Conditions |
| Drain-Source Voltage (VDS) | 100 | V | |
| On-Resistance (Rds(on)) | 1.35 | m | VGS=10V, ID=399A (Typ:1.12m) |
| Continuous Drain Current (ID) | 399 | A | Silicon Limited |
| Continuous Drain Current (ID) | 480 | A | Package Limited |
| Continuous Drain Current (ID) | 276 | A | @TC=100C, Silicon Limited |
| Pulsed Drain Current (IDM) | 1560 | A | Note1 |
| Gate-Source Voltage (VGS) | 20 | V | |
| Avalanche Energy (EAS) | 1890 | mJ | Note2 |
| Power Dissipation (PD) | 432 | W | |
| Derating Factor above 25C | 4.33 | W/ | |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | ||
| Maximum Temperature for Soldering (TL) | 260 | ||
| Thermal Resistance (RJC) | 0.3 | /W | Junction-Case |
| Thermal Resistance (RJA) | 58 | /W | Junction-Ambient |
| Drain-Source Breakdown Voltage (VDSS) | 100-110 | V | VGS=0V, ID=250A |
| Drain-Source Leakage Current (IDSS) | 1 | A | VDS=100V, VGS=0V |
| Drain-Source Leakage Current (IDSS) | 100 | A | VDS=80V, VGS=0V @TC=125C |
| Gate-Source Forward Leakage (IGSS(F)) | 100 | nA | VGS=+20V |
| Gate-Source Reverse Leakage (IGSS(R)) | -100 | nA | VGS=-20V |
| Drain-Source On-Resistance (RDS(on)) | 1.12-1.35 | m | VGS=10V, ID=50A |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V | VDS=VGS, ID=250A |
| Input Capacitance (Ciss) | 11679 | pF | VDS=50V, VGS=0, f=1MHz |
| Output Capacitance (Coss) | 2684 | pF | |
| Reverse Transfer Capacitance (Crss) | 105 | pF | |
| Total Gate Charge (Qg) | 203 | nC | VDD=50V, ID=100A, VGS=10V |
| Gate-Source charge (Qgs) | 67 | nC | |
| Gate-Drain charge (Qgd) | 30 | nC | |
| Gate resistance (RG) | 3.6 | VGS=0, VDS=0 | |
| Turn-On Delay Time (td(on)) | 34 | ns | VDD=50V, ID=10A, VGS=10V, RG=3, Resistive Load |
| Rise Time (tr) | 26 | ns | |
| Turn-Off Delay Time (td(off)) | 78 | ns | |
| Fall Time (tf) | 30 | ns | |
| Continuous Source Current (IS) | 399 | A | |
| Maximum Pulsed Current (ISM) | 1560 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | VGS=0V, IS=50A |
| Reverse Recovery Time (Trr) | 100 | ns | Is=100A, VGS=0, di/dt=100A/us |
| Reverse Recovery Charge (Qrr) | 280 | nC |
2506271720_Minos-MPT015N10-T_C49260729.pdf
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