Megain MGC021N04L N channel MOSFET designed for Or ing circuits and synchronous rectification in SMPS
Key Attributes
Model Number:
MGC021N04L
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
132A
RDS(on):
2.1mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
372pF
Input Capacitance(Ciss):
6.15nF
Pd - Power Dissipation:
83W
Output Capacitance(Coss):
430pF
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
MGC021N04L
Package:
PDFN5x6-8
Product Description
Product Overview
The MGC021N04L is an N-channel MOSFET featuring Advanced Trench MOS Technology. It offers low RDS(ON) and is 100% EAS Guaranteed, making it suitable for applications like SMPS Synchronous Rectification, DC/DC Converters, and Or-ing. A Green Device version is available.
Product Attributes
- Brand: Megain
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Value | Units | Conditions |
| Drain-Source Voltage (VDS) | 40 | V | |
| Gate-Source Voltage (VGS) | ±20 | V | |
| Continuous Drain Current (ID) @ TC=25, VGS=10V | 132 | A | TC=25 |
| Continuous Drain Current (ID) @ TC=100, VGS=10V | 83 | A | TC=100 |
| Pulsed Drain Current (IDM) | 528 | A | 2 |
| Single Pulse Avalanche Energy (EAS) | 529 | mJ | 3 |
| Total Power Dissipation (PD) @ TC=25 | 83 | W | TC=25 |
| Total Power Dissipation (PD) @ TC=100 | 33 | W | TC=100 |
| Storage Temperature Range (TSTG) | -55 to 150 | ||
| Operating Junction Temperature Range (TJ) | -55 to 150 | ||
| Thermal Resistance Junction to Ambient (RθJA) | 20 | Ω/W | 1 |
| Thermal Resistance Junction to Case (RθJC) | 1.5 | Ω/W | 1 |
| Drain-Source Breakdown Voltage (BVDSS) | 40 | V | VGS=0V, ID=250uA |
| Drain-Source On-state Resistance (RDS(ON)) | 2.1 | mΩ | VGS=10V, ID=20A (Typ) |
| Drain-Source On-state Resistance (RDS(ON)) | 2.8 | mΩ | VGS=10V, ID=20A (Max) |
| Drain-Source On-state Resistance (RDS(ON)) | 2.6 | mΩ | VGS=4.5V, ID=10A (Typ) |
| Drain-Source On-state Resistance (RDS(ON)) | 3.5 | mΩ | VGS=4.5V, ID=10A (Max) |
| Gate Threshold Voltage (VGS(th)) | 1.2 to 2.2 | V | VGS=VDS, ID=250uA |
| Drain-Source Leakage Current (IDSS) | 1 | μA | VDS=40V, VGS=0V (Max) |
| Gate-Source Leakage Current (IGSS) | ±100 | nA | VGS=±20V, VDS=0V (Max) |
| Forward Transconductance (gFS) | 28 | S | VDS=5V, ID=10A (Typ) |
| Gate Resistance (Rg) | 2.6 | Ω | VDS=0V , VGS=0V , f=1MHz (Typ) |
| Total Gate Charge (Qg) | 20 | nC | VDS=20V, VGS=10V ID=12A (Typ) |
| Gate-Source Charge (Qgs) | 9 | nC | (Typ) |
| Gate-Drain Charge (Qgd) | 11 | nC | (Typ) |
| Turn-on Delay Time (Td(ON)) | 6.9 | nS | VDS=15V, VGS=10V, RL=0.75Ω, RG=3.3Ω (Typ) |
| Turn-on Rise Time (Tr) | 1.7 | nS | (Typ) |
| Turn-off Delay Time (Td(OFF)) | 30 | nS | (Typ) |
| Turn-off Fall Time (Tf) | 15 | nS | (Typ) |
| Input Capacitance (Ciss) | 6150 | pF | VDS=20V, VGS=0V, F=1MHz (Typ) |
| Output Capacitance (Coss) | 430 | pF | (Typ) |
| Reverse Transfer Capacitance (Crss) | 372 | pF | (Typ) |
| Source-Drain Current (Body Diode) (ISD) | 132 | A | |
| Diode Forward Voltage (VSD) | 1.2 | V | VGS=0V, IS=20A (Max) |
Notes:
1. The maximum current rating is package limited.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. EAS condition: TJ=25,VDD=25V,Vgs=10V,ID=46A,L=0.5mH,RG=25ohm
2506251635_Megain-MGC021N04L_C49242745.pdf
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