Power MOSFET Minos MPT075N10L N channel device designed for improved conduction losses and switching
Key Attributes
Model Number:
MPT075N10L
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Number:
1 N-channel
Output Capacitance(Coss):
841pF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.152nF
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
MPT075N10L
Package:
TO-252
Product Description
Product Overview
The MPT075N10 is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy. It is ideally suited for synchronous rectification and high-speed switching applications.
Product Attributes
- Brand: MNS
- Certifications: RoHS
Technical Specifications
| Parameter | Rating | Units | Conditions | Min | Typ | Max |
| ABSOLUTE RATINGS | ||||||
| Drain-Source Voltage (VDSS) | 100 | V | ||||
| Continuous Drain Current (ID) | 80 | A | Silicon Limited | |||
| Continuous Drain Current (ID) | 60 | A | Package Limited | |||
| Continuous Drain Current (ID) @TC=100C | 54.9 | A | Silicon Limited | |||
| Pulsed Drain Current (IDM) | 240 | A | Note1 | |||
| Gate-Source Voltage (VGS) | ±20 | V | ||||
| Avalanche Energy (EAS) | 225 | mJ | Note2 | |||
| Power Dissipation (PD) | 104 | W | ||||
| Derating Factor above 25C | 0.83 | W/ | ||||
| Operating Junction and Storage Temperature Range (TJ, Tstg) | -55 to 150 | |||||
| Maximum Temperature for Soldering (TL) | 260 | |||||
| Thermal characteristics | ||||||
| Thermal resistance, Junction-Case (RJC) | /W | 1.2 | ||||
| Thermal resistance, Junction-Ambient (RJA) | /W | 62.5 | ||||
| OFF Characteristics | ||||||
| Drain-Source Breakdown Voltage (VDSS) | 100 | V | VGS=0V, ID=250µA | 100 | 110 | -- |
| Drain-Source Leakage Current (IDSS) | -- | µA | VDS=100V, VGS=0V | -- | -- | 1 |
| Drain-Source Leakage Current (IDSS) @TC=125C | -- | µA | VDS=80V, VGS=0V | -- | -- | 100 |
| Gate-Source Forward Leakage (IGSS(F)) | -- | nA | VGS=+20V | -- | -- | 100 |
| Gate-Source Reverse Leakage (IGSS(R)) | -- | nA | VGS=-20V | -- | -- | -100 |
| ON Characteristics | ||||||
| Drain-Source On-Resistance (RDS(on)) | -- | mΩ | VGS=10V, ID=50A | -- | 6.3 | 7.5 |
| Gate Threshold Voltage (VGS(th)) | -- | V | VDS=VGS, ID=250µA | 1 | 1.8 | 2.8 |
| Dynamic Characteristics | ||||||
| Input Capacitance (Ciss) | -- | pF | VDS=50V, VGS=0, f=1MHz | -- | 3152 | -- |
| Output Capacitance (Coss) | -- | pF | -- | 841 | -- | |
| Reverse Transfer Capacitance (Crss) | -- | pF | -- | 8 | -- | |
| Total Gate Charge (Qg) | -- | nC | VDD=50V, ID=50A, VGS=10V | -- | 55 | -- |
| Gate-Source charge (Qgs) | -- | nC | -- | 19 | -- | |
| Gate-Drain charge (Qgd) | -- | nC | -- | 14 | -- | |
| Gate resistance (RG) | 1 | Ω | VGS=0, VDS=0 | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time (td(on)) | -- | ns | VDD=50V, ID=50A, VGS=10V, RG=5Ω, Resistive Load | -- | 17 | -- |
| Rise Time (tr) | -- | ns | -- | 12 | -- | |
| Turn-Off Delay Time (td(off)) | -- | ns | -- | 35 | -- | |
| Fall Time (tf) | -- | ns | -- | 11 | -- | |
| Source-Drain Diode Characteristics | ||||||
| Continuous Source Current (IS) | -- | A | -- | -- | 80 | |
| Maximum Pulsed Current (ISM) | -- | A | -- | -- | 240 | |
| Diode Forward Voltage (VSD) | -- | V | VGS=0V, IS=50A | -- | -- | 1.2 |
| Reverse Recovery Time (Trr) | -- | ns | Is=50A,VGS=0, di/dt=100A/us | -- | 75 | -- |
| Reverse Recovery Charge (Qrr) | -- | nC | -- | 156 | -- | |
2410171638_Minos-MPT075N10L_C41433065.pdf
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