Robust Minos MDT60N06D 60V N Channel Power MOSFET offering high pulsed drain current and heat dissipation
Key Attributes
Model Number:
MDT60N06D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
12mΩ@10V,25A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
30pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
910pF@25V
Pd - Power Dissipation:
87W
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
MDT60N06D
Package:
TO-252
Product Description
Product Overview
The MDT60N06 is a 60V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high density cell design, fully characterized avalanche voltage and current, and excellent package for heat dissipation contribute to its stability and uniformity.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit | ||
| General Features | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| On-State Resistance | RDS(ON) | VGS=10V, ID=60A | <15 | m | ||
| On-State Resistance (Typ) | RDS(ON) | VGS=10V, ID=60A | 12 | m | ||
| Continuous Drain Current | ID | 60 | A | |||
| Pulsed Drain Current | IDM | (Note 1) | 200 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Single Pulse Avalanche Energy | EAS | (Note 2) | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 175 | ||||
| Thermal Resistance, Junction-to-Case | RJC | 1.72 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | 1 | A | |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A | - | 12 | 15 | m |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | - | 100 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 30 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V,RGEN=5 | - | 26 | - | nS |
| Turn-on Rise Time | tr | - | 6 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 52 | - | nS | |
| Turn-Off Fall Time | tf | - | 7 | - | nS | |
| Total Gate Charge | Qg | VDS=30V,ID=50A VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 9 | - | nC | |
| Gate-Drain Charge | Qg d | - | 5 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
2410122013_Minos-MDT60N06D_C5890264.pdf
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