switching n channel mosfet Minos MPT036N10P with low reverse transfer capacitances and gate charge
Key Attributes
Model Number:
MPT036N10P
Product Custom Attributes
Mfr. Part #:
MPT036N10P
Package:
TO-220
Product Description
Product Description
The MPT036N10P is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This technology significantly reduces conduction loss, enhances switching performance, and improves avalanche energy. It is an ideal device for motor drivers and high-speed switching applications, offering benefits such as low on-resistance, fast switching, low gate charge, low reverse transfer capacitances, and high avalanche ruggedness. This product is RoHS compliant.
Applications
- Motor drivers
- Switching applications
Product Attributes
- Brand: MNS (implied by www.mns-kx.com)
- Certifications: RoHS
Technical Specifications
| Parameter | Value | Units | Conditions |
| General Features | |||
| VDS | 100 | V | |
| RDS(ON) | <3.8 | m | VGS=10V (Typ:3.4m) |
| Absolute Maximum Ratings | |||
| VDSS | 100 | V | |
| ID (Silicon Limited) | 179 | A | Continuous Drain Current, Silicon Limited |
| ID (Package Limited) | 120 | A | Continuous Drain Current, Package Limited |
| ID (TC = 100C, Silicon Limited) | 113.7 | A | Continuous Drain Current |
| IDM | 480 | A | Pulsed Drain Current(Note1) |
| VGS | 20 | V | Gate-to-Source Voltage |
| EAS | 552 | mJ | Avalanche Energy(Note2) |
| PD | 208 | W | Power Dissipation |
| Derating Factor | 1.67 | W/ | above 25C |
| TJ, Tstg | -55 to 150 | Operating Junction and Storage Temperature Range | |
| TL | 260 | Maximum Temperature for Soldering | |
| Thermal Characteristics | |||
| RJC | 0.6 | /W | thermal resistance, Junction-to-Case |
| RJA | 62.5 | /W | thermal resistance, Junction-to-Ambient |
| Electrical Characteristics | |||
| VDSS | 100-110 | V | Drain to Source Breakdown Voltage, VGS=0V, ID=250A |
| IDSS | 1 | A | Drain to Source Leakage Current, VDS=100V, VGS= 0V, Tj= 25 |
| IDSS | 100 | A | Drain to Source Leakage Current, VDS=80V, VGS= 0V, Tj= 125 |
| IGSS(F) | 100 | nA | Gate to Source Forward Leakage, VGS=+20V |
| IGSS(R) | -100 | nA | Gate to Source Reverse Leakage, VGS=-20V |
| RDS(ON) | 3.4-3.8 | m | Drain-to-Source On- Resistance, VGS=10V, ID=50A(Note4) |
| VGS(TH) | 2.0-4.0 | V | Gate Threshold Voltage, VDS= VGS, ID= 250A(Note4) |
| Dynamic Characteristics | |||
| Ciss | 6248 | PF | Input Capacitance, VGS= 0V, VDS= 50V, f = 1.0MHz |
| Coss | 1823 | PF | Output Capacitance |
| Crss | 160 | PF | Reverse Transfer Capacitance |
| Qg | 112 | nC | Total Gate Charge, ID =50A, VDD =50V, VGS = 10V |
| Qgs | 32 | nC | Gate to Source Charge |
| Qgd | 29 | nC | Gate to Drain (Miller)Charge |
| Switching Characteristics | |||
| td(ON) | 26 | ns | Turn-on Delay Time, VDD = 50V, ID=50A, VGS = 10V, RG =3, Resistive Load |
| tr | 27 | ns | Rise Time |
| td(OFF) | 53 | ns | Turn-Off Delay Time |
| tf | 28 | ns | Fall Time |
| Source-Drain Diode Characteristics | |||
| IS | 120 | A | Continuous Source Current, TC=25 C |
| ISM | 480 | A | Maximum Pulsed Current |
| VSD | 1.2 | V | Diode Forward Voltage, IS=50A, VGS=0V(Note4) |
| Trr | 78 | ns | Reverse Recovery Time, IS=50A, Tj= 25C, dIF/dt=150A/us, VGS=0V |
| Qrr | 231 | nC | Reverse Recovery Charge |
2512101755_Minos-MPT036N10P_C53145473.pdf
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