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quality PNP low VCEsat transistor Nexperia PBSS5350Z 135 ideal for DC DC converters and supply line switching factory
quality PNP low VCEsat transistor Nexperia PBSS5350Z 135 ideal for DC DC converters and supply line switching factory

PNP low VCEsat transistor Nexperia PBSS5350Z 135 ideal for DC DC converters and supply line switching

Key Attributes
Model Number: PBSS5350Z,135
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
100MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5350Z,135
Package:
SOT-223
Product Description

Product Overview

The Nexperia PBSS5350Z is a 50 V, 3 A PNP low VCEsat transistor designed for efficient power management. This transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability, and high current gain (hFE) at high collector currents, leading to reduced heat generation and improved energy efficiency. It is ideal for applications such as DC/DC converters, supply line switching, battery chargers, LED backlighting, linear voltage regulation (LDO), and as a driver for inductive loads like relays, buzzers, and motors in low supply voltage environments.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT223 (SC-73)
  • Complementary NPN Transistor: PBSS4350Z

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - -50 V
IC Collector current - - - -3 A
ICM Peak collector current Single pulse; tp 1 ms - - -5 A
RCEsat Collector-emitter saturation resistance IC = -2 A; IB = -200 mA; Tamb = 25 C [1] - 120 150 m
VCBO Collector-base voltage Open emitter - - -60 V
VEBO Emitter-base voltage Open collector - - -6 V
IBM Peak base current Single pulse; tp 1 ms - - -1 A
Ptot Total power dissipation Device mounted on an FR4 PCB, 35 m single-sided copper, tin-plated, mounting pad for collector 6 cm2 [3] - - 1.35 W
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, 35 m single-sided copper, tin-plated and standard footprint [1] - - 192 K/W
Rth(j-sp) Thermal resistance from junction to solder point - - - 16 K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A -60 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -10 mA; IB = 0 A -50 - - V
V(BR)EBO Emitter-base breakdown voltage Collector open; IE = -100 A; IC = 0 A -6 - - V
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
hFE DC current gain VCE = -2 V; IC = -500 mA 200 - - -
VCEsat Collector-emitter saturation voltage IC = -2 A; IB = -200 mA [1] - - -300 mV
VBEsat Base-emitter saturation voltage IC = -2 A; IB = -200 mA [1] - - -1.2 V
fT Transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz 100 - - MHz
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz - - 40 pF

2410010132_Nexperia-PBSS5350Z-135_C49692.pdf

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