Power Amplification Darlington Transistor Minos MJD127 Featuring Internal Damping Diode For Circuit
Key Attributes
Model Number:
MJD127
Product Custom Attributes
Current - Collector Cutoff:
200uA
Pd - Power Dissipation:
65W
DC Current Gain:
1000
Type:
PNP
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
MJD127
Package:
TO-252
Product Description
Product Overview
This Darlington transistor is designed for high-gain circuits and includes an internal damping diode. It is suitable for applications requiring significant amplification.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Origin: Shenzhen, China (implied from contact information)
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC=-1mA, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC=-5mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | -0.5 | mA | VCE=-50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | -0.2 | mA | VCB=-100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | -2.0 | mA | VEB=-5V, IC=0 | |||
| DC Current Gain | HFE | 1000 | VCE=-3V, IC=-0.5A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat1) | -2.0 | V | IC=-3A, IB=-12mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat2) | -4.0 | V | IC=-5A, IB=-20mA | |||
| Base-Emitter On Voltage | VBE(on) | -2.5 | V | VCE=-3V, IC=-3A | |||
| Common-Base Output Capacitance | Cob | 300 | pF | VCB=-10V, IE=0, f=0.1MHz | |||
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Dissipation Power (Tc=25) | PC | 65 | W | ||||
| Collector Dissipation Power (TA=25) | PC | 2 | W | ||||
| Collector-Base Voltage | VCBO | -100 | V | ||||
| Collector-Emitter Voltage | VCEO | -100 | V | ||||
| Emitter-Base Voltage | VEBO | -5 | V | ||||
| Collector Current | IC | -5 | A | ||||
| Collector Current (Pulse) | ICP | -8 | A | ||||
| Base Current | IB | -120 | mA |
Package & Pinout
Package: TO-252
- 1 - Base (B)
- 2 - Collector (C)
- 3 - Emitter (E)
Important Notes:
- Exceeding the maximum ratings may cause permanent damage and affect device dependability. Design circuits within absolute maximum ratings.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect them during use.
- Shenzhen Minos reserves the right to make changes without prior notice.
Contact Information:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, No. 4026, Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Phone: 0755-83273777
2410121336_Minos-MJD127_C33129597.pdf
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