86--136 6733 2386
quality Low Collector Emitter Saturation Voltage Transistor Nexperia PBHV8540X 115 with High DC Current Gain factory
quality Low Collector Emitter Saturation Voltage Transistor Nexperia PBHV8540X 115 with High DC Current Gain factory

Low Collector Emitter Saturation Voltage Transistor Nexperia PBHV8540X 115 with High DC Current Gain

Key Attributes
Model Number: PBHV8540X,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
520mW
Transition Frequency(fT):
30MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
400V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
PBHV8540X,115
Package:
SOT-89
Product Description

Product Overview

The Nexperia PBHV8540X is an NPN high-voltage, low VCEsat transistor designed for medium power applications. Packaged in an SOT89 (SC-62) surface-mounted device (SMD) plastic package, this transistor offers high voltage capability and a low collector-emitter saturation voltage (VCEsat). It features high collector current capability (IC and ICM) and high DC current gain (hFE) at high IC. The PBHV8540X is AEC-Q101 qualified, making it suitable for automotive applications. Key applications include LED drivers for LED chain modules, LCD backlighting, automotive motor management, hook switches for wired telecom, and Switch Mode Power Supplies (SMPS).

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN High-Voltage Low VCEsat Transistor
  • Package Type: SOT89 (SC-62)
  • Mounting Type: Surface-Mounted Device (SMD)
  • Qualification: AEC-Q101 Qualified
  • Complementary PNP Transistor: PBHV9040X

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCESM Collector-emitter peak voltage VBE = 0 V - - 500 V
VCEO Collector-emitter voltage (open base) - - 400 V
IC Collector current - - 0.5 A
hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 C 100 200 - -
VCBO Collector-base voltage (open emitter) - - 500 V
VEBO Emitter-base voltage (open collector) - - 6 V
ICM Peak collector current - - 1 A
IBM Peak base current single pulse; tp 1 ms - 200 mA
Ptot Total power dissipation Tamb 25 C [1] - 0.52 W
Ptot Total power dissipation Tamb 25 C [2] - 1.5 W
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -55 150 C
Tstg Storage temperature - -65 150 C
Rth(j-a) Thermal resistance junction to ambient (free air) [1] - 240 K/W
Rth(j-sp) Thermal resistance junction to solder point [2] - 83 K/W
ICBO Collector-base cut-off current VCB = 320 V; IE = 0 A; Tamb = 25 C - 100 nA
IEBO Emitter-base cut-off current VCB = 320 V; IE = 0 A; Tj = 150 C - 10 A
ICES Collector-emitter cut-off current VEB = 4 V; IC = 0 A; Tamb = 25 C - 100 nA
ICES Collector-emitter cut-off current VCE = 320 V; VBE = 0 V; Tamb = 25 C - 100 nA
hFE DC current gain VCE = 10 V; IC = 50 mA; Tamb = 25 C 100 200 - -
hFE DC current gain VCE = 10 V; IC = 100 mA; tp 300 s; 0.02; Tamb = 25 C; pulsed 80 150 - -
hFE DC current gain VCE = 10 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 10 20 - -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 10 mA; Tamb = 25 C - 100 200 mV
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 20 mA; Tamb = 25 C - 60 90 mV
VCEsat Collector-emitter saturation voltage IC = 300 mA; IB = 60 mA; Tamb = 25 C - 135 250 mV
VBEsat Base-emitter saturation voltage IC = 300 mA; IB = 60 mA; Tamb = 25 C - 0.91 1.1 V
VBEsat Base-emitter saturation voltage IC = 300 mA; IB = 60 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - - V
td Delay time - - 50 ns
tr Rise time - - 6200 ns
ton Turn-on time - - 6250 ns
ts Storage time - - 800 ns
tf Fall time - - 2200 ns
toff Turn-off time VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A; Tamb = 25 C - 3000 ns
fT Transition frequency VCE = 10 V; IC = 100 mA; f = 100 MHz; Tamb = 25 C - 30 MHz
Cc Collector capacitance VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 4 pF
Ce Emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - 165 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.


2411121116_Nexperia-PBHV8540X-115_C513119.pdf

Related Products
quality High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant factory
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
quality General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic factory
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
quality Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads factory
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
quality Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor factory
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.