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quality Nexperia BCP56-16 115 NPN Medium Power Transistor 80 Volt Collector Current 1 Amp SOT223 SMD Package factory
quality Nexperia BCP56-16 115 NPN Medium Power Transistor 80 Volt Collector Current 1 Amp SOT223 SMD Package factory

Nexperia BCP56-16 115 NPN Medium Power Transistor 80 Volt Collector Current 1 Amp SOT223 SMD Package

Key Attributes
Model Number: BCP56-16,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.35W
Transition Frequency(fT):
180MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCP56-16,115
Package:
SOT-223
Product Description

Nexperia BCP56 Series: 80 V, 1 A NPN Medium Power Transistors

Product Overview
The Nexperia BCP56 series offers NPN medium power transistors in a compact SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors are designed for high collector current capability, offering multiple current gain selections and a high power dissipation capability. They are ideal for applications such as linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.

Features and Benefits

  • High collector current capability (IC and ICM)
  • Three current gain selections available
  • High power dissipation capability

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • Low-side switches
  • Power management
  • Amplifiers
  • Battery-driven devices

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 80 V
IC Collector current - - - 1 A
ICM Peak collector current Single pulse; tp ≤ 1 ms - - 2 A
hFE DC current gain BCP56
VCE = 2 V; IC = 150 mA [1]		 63 - 250 -
BCP56-10
VCE = 2 V; IC = 150 mA [1]		 63 - 160 -
BCP56-16
VCE = 2 V; IC = 150 mA [1]		 100 - 250 -
VCBO Collector-base voltage Open emitter - - 100 V
VEBO Emitter-base voltage Open collector - - 5 V
IB Base current - - - 0.3 A
IBM Peak base current Single pulse; tp ≤ 1 ms - - 0.3 A
Ptot Total power dissipation Tamb ≤ 25 °C [1] - - 0.65 W
Tamb ≤ 25 °C [2] - - 1.00 W
Tamb ≤ 25 °C [3] - - 1.35 W
Tj Junction temperature - - - 150 °C
Tamb Ambient temperature - -55 - 150 °C
Tstg Storage temperature - -65 - 150 °C
V(BR)CBO Collector-base breakdown voltage IC = 100 µA; IE = 0 A 100 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A 80 - - V
V(BR)EBO Emitter-base breakdown voltage IE = 100 µA; IC = 0 A 5 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 100 nA
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA [1] - - 500 mV
VBE Base-emitter voltage VCE = 2 V; IC = 500 mA [1] - - 1 V
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - 6 - pF
fT Transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz 100 180 - MHz

[1] Pulsed; tp ≤ 300 µs; δ ≤ 0.02

[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm².

[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm².

Product Attributes

  • Brand: Nexperia
  • Product Series: BCP56
  • Transistor Type: NPN Medium Power
  • Package Type: SOT223 (SC-73)
  • Mounting Type: Surface-Mounted Device (SMD)

2410010332_Nexperia-BCP56-16-115_C92221.pdf
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