High current Minos IRFB4110 N Channel MOSFET suitable for hard switched power applications and high EAS
Key Attributes
Model Number:
IRFB4110
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
210pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
6.6nF@25V
Pd - Power Dissipation:
211W
Gate Charge(Qg):
108nC@10V
Mfr. Part #:
IRFB4110
Package:
TO-220
Product Description
Product Overview
The IRFB4110 is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower RDS(ON), and fully characterized avalanche voltage and current for good stability and uniformity with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: MNS (implied from www.mns-kx.com)
- Package: TO-220
- Origin: Shenzhen Minos (implied from contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 180 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | 720 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 211 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 1200 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance,Junction-to-Case | RJC | 0.36 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=50A, Note 3 | 5 | 6 | mΩ | |
| Forward Transconductance | gFS | VDS=10V,ID=40A | 170 | S | ||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 6600 | pF | ||
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | 590 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | 210 | pF | ||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V,RGEN=3Ω, Note 4 | 29 | nS | ||
| Turn-on Rise Time | tr | VDD=50V, ID=20A, VGS=10V,RGEN=3Ω, Note 4 | 23 | nS | ||
| Turn-Off Delay Time | td(off) | VDD=50V, ID=20A, VGS=10V,RGEN=3Ω, Note 4 | 44 | nS | ||
| Turn-Off Fall Time | tf | VDD=50V, ID=20A, VGS=10V,RGEN=3Ω, Note 4 | 15 | nS | ||
| Total Gate Charge | Qg | VDS=50V,ID=30A, VGS=10V, Note 4 | 108 | nC | ||
| Gate-Source Charge | Qgs | VDS=50V,ID=30A, VGS=10V, Note 4 | 29 | nC | ||
| Gate-Drain Charge | Qg | VDS=50V,ID=30A, VGS=10V, Note 4 | 40 | nC | ||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | 1.2 | V |
2410122012_Minos-IRFB4110_C19189954.pdf
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