High Current NPN Transistor Nexperia BC817-40-QR in Small SOT23 Package for Automotive Electronics
Key Attributes
Model Number:
BC817-40-QR
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
345mW
Transition Frequency(fT):
-
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC817-40-QR
Package:
SOT-23
Product Description
Product Overview
The Nexperia BC817-Q series are NPN general-purpose transistors designed for switching and amplification applications. These transistors are housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. They offer high current capability and are available with three distinct current gain selections. Qualified according to AEC-Q101, these transistors are recommended for use in automotive applications.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Technology: NPN General-Purpose Transistor
- Certifications: AEC-Q101 Qualified
- Recommended Use: Automotive Applications
Technical Specifications
| Model | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| BC817-Q series | Collector-emitter voltage (VCEO) | Open base; Tamb = 25 C | - | - | 45 | V |
| Collector current (IC) | Tamb = 25 C | - | - | 500 | mA | |
| Peak collector current (ICM) | Single pulse; tp 1 ms; Tamb = 25 C | - | - | 1 | A | |
| BC817-Q | DC current gain (hFE) | VCE = 1 V; IC = 100 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | 100 | - | 600 | - |
| BC817-16-Q | DC current gain (hFE) | VCE = 1 V; IC = 100 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | 100 | - | 250 | - |
| BC817-25-Q | DC current gain (hFE) | VCE = 1 V; IC = 100 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | 160 | - | 400 | - |
| BC817-40-Q | DC current gain (hFE) | VCE = 1 V; IC = 100 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | 250 | - | 600 | - |
| BC817-Q series | Collector-base voltage (VCBO) | Open emitter; Tamb = 25 C | - | - | 50 | V |
| Emitter-base voltage (VEBO) | Open collector; Tamb = 25 C | - | - | 5 | V | |
| Peak base current (IBM) | Single pulse; tp 1 ms; Tamb = 25 C | - | - | 200 | mA | |
| Total power dissipation (Ptot) | Tamb 25 C (Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint) | - | - | 250 | mW | |
| Total power dissipation (Ptot) | Tamb 25 C (Device mounted on an FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2) | - | - | 345 | mW | |
| BC817-Q series | Junction temperature (Tj) | - | - | - | 150 | C |
| BC817-Q series | Ambient temperature (Tamb) | - | -65 | - | 150 | C |
| BC817-Q series | Storage temperature (Tstg) | - | -65 | - | 150 | C |
| BC817-Q series | Collector-base breakdown voltage (V(BR)CBO) | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| BC817-Q series | Collector-emitter breakdown voltage (V(BR)CEO) | IC = 10 mA; IE = 0 A; Tamb = 25 C | 45 | - | - | V |
| BC817-Q series | Emitter-base breakdown voltage (V(BR)EBO) | IE = 100 A; IC = 0 A; Tamb = 25 C | 5 | - | - | V |
| BC817-Q series | Collector-base cut-off current (ICBO) | VCB = 20 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| BC817-Q series | Collector-base cut-off current (ICBO) | VCB = 20 V; IE = 0 A; Tj = 150 C | - | - | 5 | A |
| BC817-Q series | Emitter-base cut-off current (IEBO) | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| BC817-Q series | Collector-emitter saturation voltage (VCEsat) | IC = 500 mA; IB = 50 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | - | - | 700 | mV |
| BC817-Q series | Base-emitter voltage (VBE) | VCE = 1 V; IC = 500 mA; Tamb = 25 C (pulsed; tp 300 s; 0.02) | - | - | 1.2 | V |
| BC817-Q series | Transition frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C | 100 | - | - | MHz |
| BC817-Q series | Collector capacitance (Cc) | VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
2410010132_Nexperia-BC817-40-QR_C5205149.pdf
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