High Collector Current PNP Silicon Transistor Minos TIP105 Darlington Type with Damping Diode Included
Key Attributes
Model Number:
TIP105
Product Custom Attributes
Current - Collector Cutoff:
200uA
Pd - Power Dissipation:
65W
DC Current Gain:
1000
Type:
PNP
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-
Mfr. Part #:
TIP105
Package:
TO220
Product Description
Product Overview
This is a PNP Silicon Transistor, specifically a Darlington transistor with an integrated damping diode. It is designed for high-gain circuits and offers a high collector current capability. Key specifications include a collector-emitter voltage of -100V, a continuous collector current of -5A, and a high DC current gain (HFE) of 1000. This device is suitable for applications requiring significant signal amplification.
Product Attributes
- Brand: MNS-KX
- Type: PNP Silicon Transistor (Darlington)
- Integrated Component: Damping Diode
Technical Specifications
| Parameter | Symbol | Description | Min | Typical | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|---|
| Storage Temperature | Tstg | -65 | 150 | ||||
| Junction Temperature | Tj | 150 | |||||
| Collector Dissipation Power | PC | (Tc=25) | 65 | W | |||
| Collector Dissipation Power | PC | (TA=25) | 2 | W | |||
| Collector-Base Voltage | CBO | -100 | V | ||||
| Collector-Emitter Voltage | CEO | -100 | V | ||||
| Emitter-Base Voltage | EBO | -5 | V | ||||
| Collector Current | IC | -5 | A | ||||
| Collector Current (Pulse) | ICP | -8 | A | ||||
| Base Current | IB | -120 | mA | ||||
| Collector-Base Breakdown Voltage | BVCBO | -100 | V | IC=1mA, IE=0 | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -100 | V | IC=5mA, IB=0 | |||
| Collector-Emitter Cutoff Current | ICEO | -0.5 | mA | VCE=50V, IB=0 | |||
| Collector-Base Cutoff Current | ICBO | -0.2 | mA | VCB=100V, IE=0 | |||
| Emitter-Base Cutoff Current | IEBO | -2.0 | mA | VEB=5V, IC=0 | |||
| DC Current Gain | HFE | 1000 | VCE=3V, IC=0.5A | ||||
| Collector-Emitter Saturation Voltage | VCE(sat1) | -2.0 | V | IC=3A, IB=12mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat2) | -4.0 | V | IC=5A, IB=20mA | |||
| Base-Emitter On Voltage | VBE(on) | -2.5 | V | VCE=3V, IC=3A | |||
| Common-Base Output Capacitance | Cob | 200 | pF | VCB=10V, IE=0, f=0.1MHz |
Pinout: 1-Base (B), 2-Collector (C), 3-Emitter (E)
Notes:
- Exceeding maximum ratings may cause permanent device failure.
- When installing a heat sink, pay attention to torsional moment and smoothness.
- MOSFETs are sensitive to static electricity; protect against static discharge.
- Shenzhen Minos reserves the right to change specifications without prior notice.
Contact:
Shenzhen Minos Technology Co., Ltd. (Headquarters)
Address: 22B-22C, Tianmian City Building, 4026 Shennan Middle Road, Tianmian Community, Huafu Street, Futian District, Shenzhen
Postal Code: 518025
Tel: 0755-83273777
2409272303_Minos-TIP105_C22389993.pdf
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