Hermetically sealed MICROCHIP 1N5418 diode with through hole and surface mount MELF package options
Key Attributes
Model Number:
1N5418
Product Custom Attributes
Mfr. Part #:
1N5418
Package:
SQ-MELF
Product Description
Product Overview
This series of "fast recovery" rectifier diodes, qualified per MIL-PRF-19500/411, is designed for high-reliability applications where failure is not an option. Featuring a voidless, hermetically sealed glass construction with an internal "Category 1" metallurgical bond, these 3.0 amp rated rectifiers offer working peak reverse voltages from 50 to 600 volts. They are available in through-hole and surface mount MELF package configurations. Microsemi also provides a wide range of other rectifier products for various current ratings and speed requirements.
Product Attributes
- Brand: Microsemi Corporation
- Certifications: Qualified per MIL-PRF-19500/411 (JAN, JANTX, JANTXV, JANS), RoHS compliant versions available (commercial grade only)
- Construction: Voidless hermetically sealed glass package, Quadruple-layer passivation, Internal "Category 1" metallurgical bonds
- Package: Through-hole, Surface mount MELF package configurations (SQ-MELF D-5B)
- Origin: USA (implied by MSC Lawrence, MA)
Technical Specifications
| Part Number | Working Peak Reverse Voltage (VRWM) | Average Rectified Forward Current (IO) @ TA = +55 C | Forward Surge Current (IFSM) @ 8.3 ms half-sine | Maximum Reverse Recovery Time (trr) | Junction and Storage Temperature (TJ and TSTG) | Thermal Resistance Junction-to-Lead (RJL) |
| 1N5415 | 50 V | 3 A | 80 A | 150 ns | -65 to +175 C | 22 C/W |
| 1N5416 | 100 V | 3 A | 80 A | 150 ns | -65 to +175 C | 22 C/W |
| 1N5417 | 200 V | 3 A | 80 A | 150 ns | -65 to +175 C | 22 C/W |
| 1N5418 | 400 V | 3 A | 80 A | 150 ns | -65 to +175 C | 22 C/W |
| 1N5419 | 500 V | 3 A | 80 A | 250 ns | -65 to +175 C | 22 C/W |
| 1N5420 | 600 V | 3 A | 80 A | 400 ns | -65 to +175 C | 22 C/W |
2409291833_MICROCHIP-1N5418_C6797949.pdf
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