High current Minos IRFP250N 200V N Channel MOSFET optimized for fast switching and energy efficiency
Key Attributes
Model Number:
IRFP250N
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
101pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
355pF
Pd - Power Dissipation:
104W
Mfr. Part #:
IRFP250N
Package:
TO-247
Product Description
Product Overview
The IRFP250N is a 200V N-Channel MOSFET manufactured using advanced MOSFET technology. This technology enhances performance by reducing conduction losses, improving switching speed, and increasing avalanche energy. It is ideal for applications requiring high-speed switching and general-purpose use, including SMPS and DC-AC inverters.
Product Attributes
- Brand: MNS-KX (implied from URL and contact)
- Material: Silicon N-Channel
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | TC = 25C, unless otherwise noted | 200 | V |
| Continuous Drain Current | ID | TC = 25C, unless otherwise noted | 30 | A |
| Pulsed Drain Current | IDM | (note1) | 160 | A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Single Pulse Avalanche Energy | EAS | (note1) | 191 | mJ |
| Avalanche Current | IAS | (note1) | 31 | A |
| Repetitive Avalanche Energy | EAR | (note1) | 124 | mJ |
| Power Dissipation | PD | (TC = 25C) | 63.7 / 104 | W |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55~+150 | C | |
| Thermal Resistance | ||||
| Thermal Resistance, Junction-to-Case | RthJC | TO-247 | 1.2 | C/W |
| Thermal Resistance, Junction-to-Ambient | RthJA | TO-247 | 60 | C/W |
| Specifications | ||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 200 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS = 0V, TJ= 25 | 1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=200V, VGS=0V, TJ= 125 | 100 | A |
| Gate-Source Leakage | IGSS | VGS = 20VVDS = 0V | 100 | nA |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 - 4.0 | V |
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 20A (Note4) | 0.07 - 0.08 | |
| Forward Transconductance | gfs | VDS = 25V, ID = 20A (Note4) | 16 | S |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, f=1.0MHz | 2800 | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, f=1.0MHz | 355 | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, f=1.0MHz | 101 | pF |
| Total Gate Charge | Qg | VDD = 160V, ID = 30A, (Note 3) | 154 | nC |
| Gate-Source Charge | Qgs | VDD = 160V, ID = 30A, (Note 3) | 13 | nC |
| Gate-Drain Charge | Qg d | VDD = 160V, ID = 30A, (Note 3) | 58 | nC |
| Turn-on Delay Time | td(on) | VDD=160V, ID=30A, VGS =15V.RG=25 | 46 | ns |
| Turn-on Rise Time | tr | VDD=160V, ID=30A, VGS =15V.RG=25 | 54 | ns |
| Turn-off Delay Time | td(off) | VDD=160V, ID=30A, VGS =15V.RG=25 | 360 | ns |
| Turn-off Fall Time | tf | VDD=160V, ID=30A, VGS =15V.RG=25 | 96 | ns |
| Drain-Source Body Diode Characteristics | ||||
| Continuous Source Current | ISD | 30 | A | |
| Pulsed Source Current | ISM | 160 | A | |
| Body Forward Voltage | VSD | IS = 20A, VGS = 0V | 1.4 | V |
| Reverse Recovery Time | trr | VGS = 0V,IF = 10A, diF/dt =100A /s | 152 | ns |
| Reverse Recovery Charge | Qrr | VGS = 0V,IF = 10A, diF/dt =100A /s | 1 | C |
2410121955_Minos-IRFP250N_C20624228.pdf
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