Nexperia BCP56-16TX 80 Volt NPN Medium Power Transistor 1 Amp Collector Current SOT223 Surface Mount

Key Attributes
Model Number: BCP56-16TX
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
600mW
Transition Frequency(fT):
155MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BCP56-16TX
Package:
SOT-223
Product Description

Nexperia BCP56T Series: 80 V, 1 A NPN Medium Power Transistors

Product Overview
The Nexperia BCP56T series comprises NPN medium power transistors housed in a SOT223 (SC-73) surface-mounted device (SMD) plastic package. These transistors offer high collector current capability, multiple current gain selections, and robust power dissipation capabilities, making them suitable for applications such as linear voltage regulators, MOSFET drivers, high-side switches, power management, and amplifiers. The series provides reliable performance for demanding electronic designs.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT223 (SC-73)
  • Transistor Type: NPN Medium Power

Technical Specifications

Model Package Type Collector-Emitter Voltage (VCEO) Collector Current (IC) Peak Collector Current (ICM) DC Current Gain (hFE) PNP Complement
BCP56T SOT223 (SC-73) 80 V 1 A 2 A (single pulse, tp 1 ms) 63 - 250 (VCE = 2 V; IC = 150 mA) BCP53T
BCP56-10T SOT223 (SC-73) 80 V 1 A 2 A (single pulse, tp 1 ms) 63 - 160 (VCE = 2 V; IC = 150 mA) BCP53-10T
BCP56-16T SOT223 (SC-73) 80 V 1 A 2 A (single pulse, tp 1 ms) 100 - 250 (VCE = 2 V; IC = 150 mA) BCP53-16T

Key Features and Benefits

  • High collector current capability (IC and ICM)
  • Three current gain selections
  • High power dissipation capability

Applications

  • Linear voltage regulators
  • MOSFET drivers
  • High-side switches
  • Power management
  • Amplifiers

Limiting Values (Tamb = 25 C unless otherwise specified)

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - 100 V
VCEO Collector-emitter voltage open base - 80 V
VEBO Emitter-base voltage open collector - 5 V
IC Collector current - - 1 A
ICM Peak collector current single pulse; tp 1 ms - 2 A
IB Base current - - 0.2 A
IBM Peak base current single pulse; tp 1 ms - 0.3 A
Ptot Total power dissipation Tamb 25 C [1] - 0.6 W
[2] - 1 W
[3] - 1.3 W
[4] - 1.3 W
Tj Junction temperature - - 150 C
Tamb Ambient temperature - -55 150 C
Tstg Storage temperature - -65 150 C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm2.
[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.

Pinning Information

Pin Symbol Description
1 B Base
2 C Collector
3 E Emitter
4 C Collector

Ordering Information

Type number Name Description Version
BCP56T - - SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223
BCP56-10T - - SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223
BCP56-16T - - SC-73 plastic, surface-mounted package with increased heatsink; 4 leads SOT223

Marking

Type number Marking code
BCP56T BCP56T
BCP56-10T P5610T
BCP56-16T P5616T

2411041820_Nexperia-BCP56-16TX_C426787.pdf
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