Power MOSFET Minos K2837-MNS Silicon N-Channel for High Frequency Switching and General Applications
Key Attributes
Model Number:
K2837-MNS
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
RDS(on):
230mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.92nF@25V
Pd - Power Dissipation:
230W
Gate Charge(Qg):
56nC@10V
Mfr. Part #:
K2837-MNS
Package:
TO-3P
Product Description
Product Overview
The K2837-MNS is a silicon N-Channel Enhanced Power MOSFET designed using advanced technology to reduce conduction loss, improve switching performance, and enhance avalanche energy. It is suitable for high-frequency switching mode power supplies (SMPS) and general-purpose applications requiring high-speed switching.
Product Attributes
- Brand: MNS (Shenzhen Minos)
- Material: Silicon N-Channel
- Certifications: RoHS product
- Package: TO-3P
Technical Specifications
| Parameter | Rating | Units | Conditions | Min. | Typ. | Max. |
| General Features | ||||||
| VDS | 500 | V | ||||
| RDS(ON) | <280 | m | VGS=10V, ID=20A | 230 | ||
| Absolute Ratings | ||||||
| VDSS | 500 | V | @ TA=25 | |||
| ID Continuous Drain Current | 20 | A | @ TA=25 | |||
| ID Continuous Drain Current | 12.6 | A | @ TC = 100 C | |||
| IDM Pulsed Drain Current | 80 | A | (Note1) | |||
| VGS Gate-to-Source Voltage | 30 | V | ||||
| EAS Single Pulse Avalanche Energy | 1200 | mJ | (Note2) | |||
| dv/dt Peak Diode Recovery dv/dt | 5.0 | V/ns | (Note3) | |||
| PD Power Dissipation (TO-220, TO-3PN) | 230 | W | @ TA=25 | |||
| PD Power Dissipation (TO-220F, TO-3PF) | 48 | W | @ TA=25 | |||
| TJTstg Operating Junction and Storage Temperature Range | 15055 to 150 | |||||
| TL Maximum Temperature for Soldering | 300 | |||||
| Thermal Characteristics (No FullPAK) | ||||||
| RJC Junction-to-Case | 0.54 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| Thermal Characteristics (FullPAK) | ||||||
| RJC Junction-to-Case | 2.6 | /W | ||||
| RJA Junction-to-Ambient | 62.5 | /W | ||||
| OFF Characteristics | ||||||
| VDSS Drain to Source Breakdown Voltage | 500 | V | VGS=0V, ID=250A | |||
| BVDSS/ TJ Bvdss Temperature Coefficient | V/ | ID=250uA, Reference25 | 0.6 | |||
| IDSS Drain to Source Leakage Current | 10 | A | VDS =500V, VGS= 0V, Tj= 25 | |||
| IDSS Drain to Source Leakage Current | 100 | A | VDS =400V, VGS= 0V, Tj= 125 | |||
| IGSS(F) Gate to Source Forward Leakage | 100 | nA | VGS=+30V | |||
| IGSS(R) Gate to Source Reverse Leakage | -100 | nA | VGS=-30V | |||
| ON Characteristics | ||||||
| RDS(ON) Drain-to-Source On- Resistance | 0.28 | VGS=10V, ID=10A(Note4) | 0.23 | |||
| VGS(TH) Gate Threshold Voltage | 4.0 | V | VDS = VGS, ID= 250A(Note4) | 2.0 | ||
| gfs Forward Transconductance | 12 | S | VDS=20V, ID =10A(Note4) | |||
| Dynamic Characteristics | ||||||
| Rg Gate resistance | 1.5 | f = 1.0MHz | ||||
| Ciss Input Capacitance | 1920 | pF | VGS = 0V VDS = 25V f = 1.0MHz | |||
| Coss Output Capacitance | 290 | pF | ||||
| Crss Reverse Transfer Capacitance | 18 | pF | ||||
| Switching Characteristics | ||||||
| td(ON) Turn-on Delay Time | 33 | ns | ID =20A VDD = 250V VGS = 10V RG =20 | |||
| tr Rise Time | 75 | ns | ||||
| td(OFF) Turn-Off Delay Time | 91 | ns | ||||
| tf Fall Time | 83 | ns | ||||
| Qg Total Gate Charge | 56 | nC | ID=20A VDD=400V VGS = 10V | |||
| Qgs Gate to Source Charge | 13 | nC | ||||
| Qgd Gate to Drain (Miller)Charge | 20 | nC | ||||
| Source-Drain Diode Characteristics | ||||||
| IS Continuous Source Current (Body Diode) | 20 | A | TC=25 C | |||
| ISM Maximum Pulsed Current (Body Diode) | 80 | A | ||||
| VSD Diode Forward Voltage | 1.2 | V | IS=20A, VGS=0V(Note4) | |||
| trr Reverse Recovery Time | 536 | ns | IS=20A, Tj = 25C dIF/dt=100A/us, VGS=0V | |||
| Qrr Reverse Recovery Charge | 5668 | nC | ||||
| Irrm Reverse Recovery Current | 21.1 | A | ||||
2412110943_Minos-K2837-MNS_C42411365.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
