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quality PNP high voltage transistor Nexperia PMBTA92 215 in compact SOT23 package for telephony applications factory
quality PNP high voltage transistor Nexperia PMBTA92 215 in compact SOT23 package for telephony applications factory

PNP high voltage transistor Nexperia PMBTA92 215 in compact SOT23 package for telephony applications

Key Attributes
Model Number: PMBTA92,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
50MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBTA92,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PMBTA92 is a PNP high-voltage transistor designed for surface-mounted applications. Housed in a compact SOT23 plastic package, this transistor offers a low current capability of up to 100 mA and a high voltage rating of up to 300 V. It is an ideal component for applications in telephony and professional communication equipment. Its NPN complement is the PMBTA42.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP high-voltage transistor
  • Package Type: SOT23
  • Complementary NPN Transistor: PMBTA42

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -300 V
IC Collector current - - -100 mA
hFE DC current gain VCE = -10 V; IC = -10 mA; pulsed; tp 300 s; 0.02 40 - -
VCBO Collector-base voltage open emitter - - -300 V
VEBO Emitter-base voltage open collector - - -5 V
ICM Peak collector current - - -200 mA
IBM Peak base current single pulse; tp 1 ms - - -100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = -100 A; IE = 0 A; Tamb = 25 C -300 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = -1 mA; IB = 0 A; Tamb = 25 C -300 - - V
V(BR)EBO Emitter-base breakdown voltage (collector open) IE = -100 A; IC = 0 A; Tamb = 25 C -5 - - V
ICBO Collector-base cut-off current VCB = -200 V; IE = 0 A; Tamb = 25 C - - -250 nA
IEBO Emitter-base cut-off current VEB = -3 V; IC = 0 A; Tamb = 25 C - - -100 nA
VCEsat Collector-emitter saturation voltage VCE = -10 V; IC = -1 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 25 - - V
hFE DC current gain VCE = -10 V; IC = -10 mA; pulsed; tp 300 s; 0.02 40 - -
hFE DC current gain VCE = -10 V; IC = -30 mA; pulsed; tp 300 s; 0.02 25 - -
VBEsat Base-emitter saturation voltage IC = -20 mA; IB = -2 mA; Tamb = 25 C - - -900 mV
fT Transition frequency VCE = -20 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C 50 - - MHz
Cc Collector capacitance VCB = -20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 6 pF

2410122002_Nexperia-PMBTA92-215_C282560.pdf

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