TO220 Package Power MOSFET Minos MPG190N04P Ideal for High Frequency and Hard Switched Circuits
Key Attributes
Model Number:
MPG190N04P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Output Capacitance(Coss):
1.95nF
Input Capacitance(Ciss):
7.5nF
Pd - Power Dissipation:
242W
Gate Charge(Qg):
125nC@10V
Mfr. Part #:
MPG190N04P
Package:
TO-220
Product Description
Product Overview
The MPG190N04P is a high-performance N-Channel Power MOSFET utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Its high-density cell design ensures ultra-low RDS(ON), and it is fully characterized for avalanche voltage and current. The TO-220 package provides good heat dissipation.
Product Attributes
- Brand: MNS (www.mns-kx.com)
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| OFF Characteristics | ||||||
| Drain to Source Breakdown Voltage | VDSS | VGS=0V, ID=250A | 40 | -- | -- | V |
| Drain to Source Leakage Current | IDSS | VDS=32V, VGS= 0V,Ta=25 | -- | -- | 1.0 | A |
| Gate to Source Forward Leakage | IGSS(F) | VGS=+20V | -- | -- | 0.1 | A |
| Gate to Source Reverse Leakage | IGSS(R) | VGS=-20V | -- | -- | -0.1 | A |
| ON Characteristics | ||||||
| Drain-to-Source On-Resistance | RDS(ON) | VGS=10V,ID=80A | -- | 3.5 | 4.0 | m |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250A | 2.0 | 3.0 | 4.0 | V |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V,VDS=20V f=1.0MHz | -- | 7500 | -- | pF |
| Output Capacitance | Coss | VGS=0V,VDS=20V f=1.0MHz | -- | 1950 | -- | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V,VDS=20V f=1.0MHz | -- | 120 | -- | pF |
| Resistive Switching Characteristics | ||||||
| Turn-on Delay Time | td(ON) | VDD=20V,ID=85A VGS=10V,RG=1.6,RL=0.5 | -- | 15 | -- | ns |
| Rise Time | tr | VDD=20V,ID=85A VGS=10V,RG=1.6,RL=0.5 | -- | 9 | -- | ns |
| Turn-Off Delay Time | td(OFF) | VDD=20V,ID=85A VGS=10V,RG=1.6,RL=0.5 | -- | 60 | -- | ns |
| Fall Time | tf | VDD=20V,ID=85A VGS=10V,RG=1.6,RL=0.5 | -- | 11 | -- | ns |
| Total Gate Charge | Qg | VDD=20V, ID=85A VGS=10V | -- | 125 | -- | nC |
| Gate to Source Charge | Qgs | VDD=20V, ID=85A VGS=10V | -- | 18 | -- | nC |
| Gate to Drain ( Miller )Charge | Qgd | VDD=20V, ID=85A VGS=10V | -- | 14 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Reverse Recovery Time | trr | IS=190A,Tj=25 dIF/dt=100A/s,VGS=0V | -- | 35 | -- | ns |
| Reverse Recovery Charge | Qrr | IS=190A,Tj=25 dIF/dt=100A/s,VGS=0V | -- | 125 | -- | C |
| Continuous Source Current | IS | a2(Body Diode) | -- | -- | 190 | A |
| Diode Forward Voltage | VSD | IS=80A,VGS=0V | -- | -- | 1.2 | V |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 40 | -- | -- | V | |
| Continuous Drain Current | ID | -- | -- | 190 | A | |
| Pulsed Drain Current | IDM | -- | -- | 1000 | A | |
| Gate-to-Source Voltage | VGS | -- | -- | 20 | V | |
| Power Dissipation | PD | -- | -- | 242 | W | |
| Single pulse avalanche energy | EAS | -- | -- | 1300 | mJ | |
| Operating Junction and Storage Temperature Range | TJTstg | 55 | -- | 175 | ||
| Thermal Characteristics | ||||||
| Junction-to-Case | RJC | -- | 0.62 | -- | /W | |
2509171410_Minos-MPG190N04P_C51933929.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
