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quality SOT23 Package Nexperia PDTC114ET QR NPN Resistor Equipped Transistor Ideal for Automotive and Industrial factory
quality SOT23 Package Nexperia PDTC114ET QR NPN Resistor Equipped Transistor Ideal for Automotive and Industrial factory

SOT23 Package Nexperia PDTC114ET QR NPN Resistor Equipped Transistor Ideal for Automotive and Industrial

Key Attributes
Model Number: PDTC114ET-QR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
10V
Pd - Power Dissipation:
250mW
DC Current Gain:
30@5mA,5V
Resistor Ratio:
1
Type:
NPN
Current - Collector(Ic):
100mA
Number:
1 NPN (Pre-Biased)
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PDTC114ET-QR
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTC114ET-Q is an NPN Resistor-Equipped Transistor (RET) in a compact SOT23 SMD plastic package. Designed for digital applications in automotive and industrial segments, this transistor offers a 100 mA output current capability and features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. It is qualified according to AEC-Q101 and recommended for automotive applications, serving as a cost-saving alternative for BC847-Q series in digital applications. It is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Package Type: SOT23
  • Qualification: AEC-Q101
  • Application Suitability: Automotive

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative -10 - - V
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient In free air [1] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor.


2410121947_Nexperia-PDTC114ET-QR_C5336794.pdf

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