Power Switching Device Minos MDT12N10L N Channel MOSFET Featuring Low Gate Charge and Excellent RDS
Key Attributes
Model Number:
MDT12N10L
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
12A
RDS(on):
120mΩ@4.5V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
680pF@25V
Pd - Power Dissipation:
31W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
MDT12N10L
Package:
TO-252
Product Description
MDT12N10L N-Channel Power MOSFET
The MDT12N10L is an N-Channel Power MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. It is designed for a wide variety of applications, offering high density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation. This device is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supply systems.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 12 | A | |||
| Drain Current-Pulsed | IDM | Note 1 | 40 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 31 | W | ||
| Single pulse avalanche energy | EAS | Note 2 | 21 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Resistance,Junction-to-Case | RJC | 4.8 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.8 | 2.4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=5A, Note 3 | 90 | 110 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=5A, Note 3 | 110 | 120 | m | |
| Forward Transconductance | gFS | VDS=25V,ID=3.6A | 5 | S | ||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | 680 | pF | ||
| Output Capacitance | Coss | 110 | pF | |||
| Reverse Transfer Capacitance | Crss | 85 | pF | |||
| Turn-on Delay Time | td(on) | VDD=50V, ID=5A, VGS=10V,RGEN=2.5, Note 4 | 10 | nS | ||
| Turn-on Rise Time | tr | Note 4 | 7 | nS | ||
| Turn-Off Delay Time | td(off) | Note 4 | 34 | nS | ||
| Turn-Off Fall Time | tf | Note 4 | 9 | nS | ||
| Total Gate Charge | Qg | VDS=80V,ID=3A, VGS=10V | 16 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg d | 5 | nC | |||
| Diode Forward Voltage | VSD | VGS=0V,IS=12A | 1.2 | V |
2412021740_Minos-MDT12N10L_C42401741.pdf
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