switching diode MICROCHIP 1N4148UR-1TR hermetically sealed glass MELF package for high speed applications
Key Attributes
Model Number:
1N4148UR-1/TR
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@75V
Reverse Recovery Time (trr):
20ns
Diode Configuration:
Independent
Operating Junction Temperature Range:
-65℃~+175℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
75V
Voltage - Forward(Vf@If):
1.2V@100mA
Current - Rectified:
-
Mfr. Part #:
1N4148UR-1/TR
Package:
DO-213AA
Product Description
Product Overview
The 1N4148UR-1 is a popular JEDEC registered glass MELF switching/signal diode featuring internal metallurgical bonded construction for military-grade products. This small, low-capacitance diode offers very fast switching speeds and is hermetically sealed in a double-plug DO-213AA package. It is suitable for a variety of high-speed applications including switchers, detectors, transient OR'ing, logic arrays, blocking, and low-capacitance steering diodes. It is the surface mount equivalent of the popular JEDEC registered 1N4148.
Product Attributes
- Brand: Microsemi Corporation
- Origin: USA (implied by MSC Lawrence address)
- Material: Hermetically sealed glass construction, Metallurgically bonded, Double plug construction
- Certifications: Qualified per MIL-PRF-19500/116 (JAN, JANTX, JANTXV levels available), RoHS compliant version available (commercial grade only)
- Package: DO-213AA
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| Junction and Storage Temperature | TJ & TSTG | -65 to +175 | C | |
| Thermal Resistance Junction-to-Ambient | RJA | 325 | C/W | (1) TA = +75C on PCB, FR4 - .0625 inch, 1-layer 1-Oz Cu, horizontal, still air; pads = .061 inch x.105 inch; measured at IO = 200 mA dc. |
| Thermal Resistance Junction-to-Endcap | RJEC | 100 | C/W | (2) See Figure 2 for thermal impedance curves. |
| Maximum Breakdown Voltage | V(BR) | 100 | V | |
| Working Peak Reverse Voltage | VRWM | 75 | V | |
| Average Rectified Current @ TA = 75 C | IO | 200 | mA | (3) See Figure 1 for derating. |
| Non-Repetitive Sinusoidal Surge Current (tp = 8.3 ms) | IFSM | 2 | A (pk) | |
| Forward Voltage @ IF=10 mA | VF1 | 0.8 | V | |
| Forward Voltage @ IF=100 mA | VF2 | 1.2 | V | |
| Reverse Recovery Time | trr | 5 | ns | NOTE 1: IF = IR = 10 mA, RL = 100 Ohms. |
| Forward Recovery Time | tfr | 20 | ns | NOTE 2: IF = 50 mA. |
| Reverse Current @ 20 V | IR1 | 25 | nA | |
| Reverse Current @ 75 V | IR2 | 0.5 | A | |
| Reverse Current @ 20 V TA=150oC | IR3 | 35 | A | |
| Reverse Current @ 75 V TA=150oC | IR4 | 75 | A | |
| Capacitance | C | 4.0 | pF | NOTE 3: VR = 0 V, f = 1 MHz, VSIG = 50 mV (pk to pk). |
| Capacitance | C | 2.8 | pF | NOTE 4: VR = 1.5V, f = 1 MHz, VSIG = 50 mV (pk to pk). |
2410121715_MICROCHIP-1N4148UR-1-TR_C3312673.pdf
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