Low IR Value Schottky Diode Minos MBRF20200CT for High Frequency Power Supply and Switching Circuits
Key Attributes
Model Number:
MBRF20200CT
Product Custom Attributes
Reverse Leakage Current (Ir):
200A
Non-Repetitive Peak Forward Surge Current:
200A
Diode Configuration:
1 Pair Common Cathode
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
930mV@10A
Mfr. Part #:
MBRF20200CT
Package:
TO-220F
Product Description
Product Overview
The MBRF200CT is a SBD Schottky Barrier Diode optimized for low forward voltage and low reverse leakage current. It is designed for high-frequency switched-mode power supplies, offering high ESD capability, 150 operating junction temperature, high frequency operation, low IR value, and high surge capacity.
Product Attributes
- Brand: MNS-KX
- Origin: Shenzhen Minos (implied by contact information)
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Absolute Maximum Ratings | VRRM | 200 | V | |
| IF(AV) | TA=110 | 20 | A | |
| IFSM | TA=25 | 200 | A | |
| IFRM | Square wave, 20kHZ | 60 | A | |
| Tj | 150 | |||
| Tstg | -55 to +175 | |||
| Electrical Characteristics | VBR | VR=200V, IR=100A | 200 | V |
| VF | IF=5.0A | 0.80 - 0.85 | V | |
| IF=10.0A | 0.86 - 0.93 | V | ||
| IR | VR=VRRM | 10 | A | |
| Tj=125, VR=200V | 2000 | A | ||
| Thermal Characteristics | RthJC | - 4.0 | /W |
Package Description
TO-220F
| Symbol | MIN | MAX |
|---|---|---|
| A | 4.35 | 4.75 |
| A1 | 2.30 | 2.70 |
| A2 | 0.40 | 0.80 |
| A3 | 2.10 | 2.50 |
| b | 0.60 | 1.00 |
| b1 | 1.00 | 1.40 |
| c | 0.30 | 0.70 |
| e | 2.30 | 2.70 |
| E | 9.80 | 10.2 |
| E1 | 6.30 | 6.70 |
| H | 15.6 | 16.0 |
| H1 | 8.80 | 9.20 |
| H2 | 12.9 | 13.5 |
| H3 | 3.10 | 3.50 |
| G | 3.10 | 3.50 |
| p | 3.10 | 3.50 |
2506271720_Minos-MBRF20200CT_C49260730.pdf
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