Low RDS ON Power MOSFET Minos IRFZ44N MNS with High Density Cell Design and Avalanche Current Rating
Key Attributes
Model Number:
IRFZ44N-MNS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
60A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
87W
Input Capacitance(Ciss):
910pF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
IRFZ44N-MNS
Package:
TO-220
Product Description
Product Description
The IRFZ44N-MNS is an N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of applications including power switching, hard switched and high frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), and it is fully characterized for avalanche voltage and current with good stability and uniformity.
Product Attributes
- Brand: MNS
- Package: TO-220
- Certifications: 100% UIS TESTED!, 100% DVDS TESTED!
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Key Characteristics | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 60 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 12 | 15 | m | |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | TA=25 | 60 | V | ||
| Gate-Source Voltage | VGS | TA=25 | 20 | V | ||
| Continuous Drain Current | ID | TA=25 | 60 | A | ||
| Pulsed Drain Current | IDM | Note 1 | 200 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 87 | W | ||
| Single Pulse Avalanche Energy | EAS | Note 2 | 120 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.72 | /W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=25A, Note 3 | - | 12 | 15 | m |
| Forward Transconductance | gFS | VDS=25V,ID=25A | - | 25 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 910 | - | pF |
| Output Capacitance | Coss | VDS=25V,VGS=0V, f=1.0MHz | - | 100 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=25V,VGS=0V, f=1.0MHz | - | 30 | - | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | Note 4 | - | 26 | - | nS |
| Turn-on Rise Time | tr | Note 4 | - | 6 | - | nS |
| Turn-Off Delay Time | td(off) | Note 4 | - | 52 | - | nS |
| Turn-Off Fall Time | tf | Note 4 | - | 7 | - | nS |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=30V,ID=50A, VGS=10V | - | 31 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V,ID=50A, VGS=10V | - | 9 | - | nC |
| Gate-Drain Charge | Qg | VDS=30V,ID=50A, VGS=10V | - | 5 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=50A | - | - | 1.2 | V |
2412110943_Minos-IRFZ44N-MNS_C42411369.pdf
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