N Channel Power MOSFET Minos P75NF75 80V with Low Gate Charge and Fully Characterized Avalanche Voltage
Key Attributes
Model Number:
P75NF75
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+175℃@(Tj)
RDS(on):
10mΩ@10V,35A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
210pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.95nF@25V
Pd - Power Dissipation:
147W
Gate Charge(Qg):
85nC@10V
Mfr. Part #:
P75NF75
Package:
TO-220
Product Description
Product Overview
The P75NF75 is an 80V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard-switched and high-frequency circuits, as well as uninterruptible power supplies. Key features include high ESD capability, high density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS (derived from www.mns-kx.com)
- Origin: Shenzhen Minos (derived from contact information)
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 80 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 80 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 280 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 147 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 330 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RJC | 1.02 | /W | |||
| Thermal Resistance,Junction-to-Ambient | RJA | 62.5 | /W | |||
| Electrical Characteristics | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1 | µA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | - | - | ±100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250µA | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=35A (Note 3) | - | 10 | 12 | mΩ |
| Forward Transconductance | gFS | VDS=20V,ID=35A | - | 90 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 3950 | - | pF |
| Output Capacitance | Coss | - | 280 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 210 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=40V, ID=35A, VGS=10V,RGEN=3Ω (Note 4) | - | 130 | - | nS |
| Turn-on Rise Time | tr | - | 200 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 350 | - | nS | |
| Turn-Off Fall Time | tf | - | 245 | - | nS | |
| Total Gate Charge | Qg | VDS=64V,ID=35A, VGS=10V | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 24 | - | nC | |
| Gate-Drain Charge | Qg d | - | 28 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | - | - | 1.2 | V |
2410122013_Minos-P75NF75_C7587856.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
