Durable Power Switching Device Minos IRF540N-MNS 100V N Channel MOSFET with Low RDS ON and Gate Charge
Key Attributes
Model Number:
IRF540N-MNS
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
2.55nF
Pd - Power Dissipation:
70W
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
IRF540N-MNS
Package:
TO-220
Product Description
Product Overview
The IRF540N-MNS is a 100V N-Channel Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, good stability and uniformity with high EAS, and an excellent package for good heat dissipation.
Product Attributes
- Brand: MNS
- Package: TO-220
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 35 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 100 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 70 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 96 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJ | 3.5 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=12A | 25 | 30 | mΩ | |
| Forward Transconductance | gFS | VDS=5V, ID=15A | 11 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V, VGS=0V, f=1.0MHz | 2550 | pF | ||
| Output Capacitance | Coss | 225 | pF | |||
| Reverse Transfer Capacitance | Crss | 205 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=50V, ID=20A, VGS=10V, RGEN=10Ω | 29 | nS | ||
| Turn-on Rise Time | tr | 13 | nS | |||
| Turn-Off Delay Time | td(off) | 58.2 | nS | |||
| Turn-Off Fall Time | tf | 13.4 | nS | |||
| Total Gate Charge | Qg | VDS=80V, ID=20A, VGS=10V | 55 | nC | ||
| Gate-Source Charge | Qgs | 15 | nC | |||
| Gate-Drain Charge | Qg d | 20 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=20A | 1.2 | V | ||
| Reverse Recovery Time | Trr | Tj=25, IF=10A, di/dt=100A/uS (note3) | 58 | nS | ||
| Reverse Recovery Charge | Qrr | 110 | nC | |||
2412110943_Minos-IRF540N-MNS_C42411367.pdf
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