Enhanced Silicon MOSFET Minos MLS65R580P Featuring Super Junction Technology for Switching Efficiency
Key Attributes
Model Number:
MLS65R580P
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
500mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
3.1pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
410.8pF@25V
Pd - Power Dissipation:
26W
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
MLS65R580P
Package:
TO-220F
Product Description
Product Overview
The MLS65R580P is a silicon N-channel Enhanced MOSFET utilizing advanced Super Junction technology. This design significantly reduces conduction loss and enhances switching performance, making it an ideal component for high-speed switching applications. It is well-suited for use in Switch Mode Power Supplies (SMPS) and general-purpose applications.
Product Attributes
- Brand: MNS
- Package: TO-220F
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| VDSS | Drain-to-Source Breakdown Voltage | 650 | V | |||
| ID | Drain Current (continuous) | at TC=25 | 8 | A | ||
| IDM | Drain Current (pulsed) | 24 | A | |||
| VGS | Gate to Source Voltage | 30 | V | |||
| Ptot | Total Dissipation | at TC=25 | 26 | W | ||
| Tj Max. | Operating Junction Temperature | 150 | ||||
| Eas | Single Pulse Avalanche Energy | 140 | mJ | |||
| VDS | Drain-source Voltage | VGS=0V, ID=250A | 650 | V | ||
| RDS(on) | Static Drain-to-Source on-Resistance | VGS=10V,ID=4.0A | 0.50 | 0.58 | ||
| VGS(th) | Gated Threshold Voltage | VDS=VGS, D=250A | 2 | 4 | V | |
| IDSS | Drain-Source Leakage Current | VDS=650V, VGS= 0V | 1.0 | A | ||
| IGSS(F) | Gate-Source Forward Leakage | VGS= +30V | 100 | nA | ||
| IGSS(R) | Gate-Source Reverse Leakage | VGS= -30V | -100 | nA | ||
| Ciss | Input Capacitance | VGS = 0V, VDS = 25V, f = 1.0MHz | 410.8 | pF | ||
| Coss | Output Capacitance | 41.7 | pF | |||
| Crss | Reverse Transfer Capacitance | 3.1 | pF | |||
| Qg | Total Gate Charge | ID =5.0A, VDD =400V, VGS = 10V | 8.6 | nC | ||
| Qgs | Gate-Source Charge | 2.2 | nC | |||
| Qgd | Gate-Drain Charge | 3.8 | nC | |||
| td(on) | Turn-on Delay Time | ID =4.0A, VDD =400V, VGS =10V, RG=25 | 26.4 | nS | ||
| tr | Turn-on Rise Time | 17.9 | nS | |||
| td(off) | Turn-off Delay Time | 56.2 | nS | |||
| tf | Turn-off Fall Time | 14 | nS | |||
| IS | Continuous Source Current (Body Diode) | TC=25 C | -- | -- | 18 | A |
| ISM | Maximum Pulsed Current (Body Diode) | -- | -- | 24 | A | |
| VSD | Diode Forward Voltage | ID=8A, VGS=0V(Note4) | -- | -- | 1.3 | V |
| trr | Reverse Recovery Time | IS=4A, Tj = 25C, dIF/dt=100A/us, VGS=0V | -- | 214.3 | -- | ns |
| Qrr | Reverse Recovery Charge | -- | 1.7 | -- | nC |
2411220027_Minos-MLS65R580P_C19272225.pdf
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