High Input Impedance and Fast Switching Speed MICROCHIP LP0701LG G P Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
LP0701LG-G
Product Custom Attributes
Drain To Source Voltage:
16.5V
Current - Continuous Drain(Id):
1.25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@3V,150mA
Gate Threshold Voltage (Vgs(th)):
500mV
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
250pF
Mfr. Part #:
LP0701LG-G
Package:
SOIC-8
Product Description
Product Overview
The LP0701 is a P-Channel Enhancement-Mode Lateral MOSFET designed for logic-level interfaces, solid-state relays, battery-operated systems, photovoltaic drives, analog switches, and general-purpose line drivers. It features an ultra-low threshold voltage, high input impedance, low input capacitance, fast switching speeds, low on-resistance, and freedom from secondary breakdown. Its MOS structure ensures it is free from thermal runaway and thermally induced secondary breakdown, making it ideal for handheld and battery-operated applications due to its low threshold voltage and low on-resistance characteristics.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: LP0701
- Origin: Silicon-gate manufacturing process
- Certifications: Pb-free (JEDEC designator for Matte Tin (Sn))
Technical Specifications
| Parameter | Sym. | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | V | ||||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | ±10 | V | ||||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| DC Electrical Characteristics (TA = 25°C unless otherwise specified) | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | -16.5 | V | VGS = 0V, ID = –1 mA | ||
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.7 | -1 | V | VGS = VDS, ID = –1 mA |
| Change in VGS(th) with Temperature | ΔVGS(th) | -4 | mV/°C | VGS = VDS, ID = –1 mA (Note 1) | ||
| Gate Body Leakage Current | IGSS | -100 | nA | VGS = ±10V, VDS = 0V | ||
| Zero-Gate Voltage Drain Current | IDSS | -100 | nA | VDS = –15V, VGS = 0V | ||
| -1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA= 125°C (Note 1) | ||||
| On-State Drain Current | ID(ON) | -0.4 | A | VGS = VDS = –2V | ||
| -0.6 | -1 | A | VGS = VDS = –3V | |||
| -1.25 | -2.3 | A | VGS = VDS = –5V | |||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 2 | 4 | Ω | VGS = –2V, ID = –50 mA | |
| 1.7 | 2 | Ω | VGS = –3V, ID = –150 mA | |||
| 1.3 | 1.5 | Ω | VGS = –5V, ID = –300 mA | |||
| Change in RDS(ON) with Temperature | ΔRDS(ON) | 0.75 | %/°C | VGS = –5V, ID = –300 mA (Note 1) | ||
| AC Electrical Characteristics (TA = 25°C unless otherwise specified) | ||||||
| Forward Transconductance | GFS | 500 | 700 | mmho | VGS = –15V, ID = –1A | |
| Input Capacitance | CISS | 120 | 250 | pF | VGS = 0V, VDS = –15V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 100 | 125 | pF | ||
| Reverse Transfer Capacitance | CRSS | 40 | 60 | pF | ||
| Turn-On Delay Time | td(ON) | 20 | ns | VDD = –15V, ID = –1.25A, RGEN = 25Ω | ||
| Rise Time | tr | 20 | ns | |||
| Turn-Off Delay Time | td(OFF) | 30 | ns | |||
| Fall Time | tf | 30 | ns | |||
| Diode Parameter | ||||||
| Diode Forward Voltage Drop | VSD | -1.2 | -1.5 | V | VGS = 0V, ISD = –500 mA (Note 1) | |
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | -55 | +150 | °C | ||
| Storage Temperature | TS | -55 | +150 | °C | ||
| Package Thermal Resistance | ||||||
| 3-lead TO-92 | θJA | 132 | °C/W | Note 1 | ||
| 8-lead SOIC | θJA | 101 | °C/W | Note 1 | ||
| Thermal Characteristics | ||||||
| Package ID | (Note 1) | ID (Continuous) (mA) | ID (Pulsed) (A) | Power Dissipation at TA = 25°C (W) | IDR (Note 1) (mA) | IDRM (mA) |
| 3-lead TO-92 | -500 | -1.25 | 1 | -500 | -1.25 | |
| 8-lead SOIC | (Note 2) | -700 | -1.25 | 1.5 | -700 | -1.25 |
2410121817_MICROCHIP-LP0701LG-G_C622921.pdf
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