Minos D90N25 MNS Silicon N Channel Power MOSFET Suitable for General Purpose Applications and SMPS
Key Attributes
Model Number:
D90N25-MNS
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
9.65nF@25V
Pd - Power Dissipation:
830W
Gate Charge(Qg):
148nC@10V
Mfr. Part #:
D90N25-MNS
Package:
TO-247
Product Description
Product Description
The D90N25-MNS is a silicon N-channel Enhanced Power MOSFET utilizing advanced MOSFET technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications requiring high-speed switching and general-purpose use, particularly in Switched-Mode Power Supplies (SMPS).
Product Attributes
- Brand: MNS
- Material: Silicon N-Channel
- Certifications: RoHS product
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| ABSOLUTE RATINGS | ||||||
| VDSS | Drain-to-Source Voltage | 250 | V | |||
| ID | Continuous Drain Current | TC = 25C | 90 | A | ||
| ID | Continuous Drain Current | TC = 100C | 73 | A | ||
| IDM | Pulsed Drain Current (Note1) | 360 | A | |||
| VGS | Gate-to-Source Voltage | ±30 | V | |||
| EAS | Single Pulse Avalanche Energy (Note2) | 4200 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt (Note3) | 5.0 | V/ns | |||
| PD | Power Dissipation | 830 | W | |||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 150 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Thermal characteristics | ||||||
| RJC | Junction-to-Case | 0.15 | /W | |||
| RJA | Junction-to-Ambient | 62.5 | /W | |||
| OFF Characteristics | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 250 | -- | -- | V |
| ΔBVDSS/ΔTJ | Bvdss Temperature Coefficient | ID=250uA, Reference25 | 0.2 | V/ | ||
| IDSS | Drain to Source Leakage Current | VDS =250V, VGS= 0V, Tj= 25 | -- | 10 | µA | |
| IDSS | Drain to Source Leakage Current | VDS =200V, VGS= 0V, Tj= 125 | -- | 100 | µA | |
| IGSS(F) | Gate to Source Forward Leakage | VGS =+30V | -- | 100 | nA | |
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-30V | -- | -100 | nA | |
| ON Characteristics | ||||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=45A (Note4) | 26 | 35 | mΩ | |
| VGS(TH) | Gate Threshold Voltage | VDS= VGS, ID= 250µA (Note4) | 2.0 | -- | 4.0 | V |
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | 1.1 | Ω | ||
| Ciss | Input Capacitance | VGS= 0V VDS = 25V f = 1.0MHz | 9650 | PF | ||
| Coss | Output Capacitance | 930 | ||||
| Crss | Reverse Transfer Capacitance | 42 | ||||
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID=45A VDD= 125V VGS= 10V RG=1Ω | 51 | ns | ||
| tr | Rise Time | 174 | ||||
| td(OFF) | Turn-Off Delay Time | 40 | ||||
| tf | Fall Time | 162 | ||||
| Qg | Total Gate Charge | ID=90A VDD =200V VGS= 10V | 148 | nC | ||
| Qgs | Gate to Source Charge | 36 | ||||
| Qgd | Gate to Drain (Miller)Charge | 55 | ||||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | TC=25 °C | -- | 90 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | -- | 360 | A | ||
| VSD | Diode Forward Voltage | IS=90A, VGS=0V (Note4) | -- | 1.2 | V | |
| trr | Reverse Recovery Time | IS=45A, Tj= 25°C dIF/dt=100A/us, VGS=0V | 260 | ns | ||
| Qrr | Reverse Recovery Charge | 2950 | nC | |||
2412110943_Minos-D90N25-MNS_C42411361.pdf
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