Built in bias resistor transistors Nexperia PUMD6 115 ideal for simplifying digital circuit designs
Key Attributes
Model Number:
PUMD6,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
4.7kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD6,115
Package:
TSSOP-6(SOT-363)
Product Description
Product Overview
The PEMD6 and PUMD6 are NPN/PNP resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 4.7 k, R2 = open), these devices offer reduced pick and place costs and are ideal for low current peripheral driver applications, replacement of general-purpose transistors in digital applications, and control of IC inputs.
Product Attributes
- Brand: Nexperia (formerly NXP Semiconductors)
- Type: NPN/PNP resistor-equipped transistors
- Bias Resistor R1: 4.7 k
- Bias Resistor R2: Open
- Origin: Made in Hong Kong (* = p), Made in Malaysia (* = t)
Technical Specifications
| Type Number | Package | Marking Code | NPN/NPN Complement | PNP/PNP Complement | EIAJ |
|---|---|---|---|---|---|
| PEMD6 | SOT666 | D6 | PHILIPS | PEMH7 | PEMB3 |
| PUMD6 | SOT363 (SC-88) | D*6(1) | PUMH7 | PUMB3 |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Quick Reference Data | ||||||
| VCEO | Collector-emitter voltage | 50 | V | |||
| IO | Output current (DC) | 100 | mA | |||
| R1 | Bias resistor | 4.7 | k | |||
| Limiting Values | ||||||
| VCBO | Collector-base voltage (PNP with negative polarity) | Open emitter | 50 | V | ||
| VCEO | Collector-emitter voltage | Open base | 50 | V | ||
| VEBO | Emitter-base voltage | Open collector | 5 | V | ||
| IO | Output current (DC) | 100 | mA | |||
| ICM | Peak collector current | 100 | mA | |||
| Ptot | Total power dissipation | Tamb 25 C; SOT363 (note 1) | 200 | mW | ||
| Tamb 25 C; SOT666 (notes 1 and 2) | 200 | mW | ||||
| Ptot | Total power dissipation (Per device) | Tamb 25 C; SOT363 (note 1) | 300 | mW | ||
| Tamb 25 C; SOT666 (notes 1 and 2) | 300 | mW | ||||
| Tstg | Storage temperature | 65 | +150 | C | ||
| Tj | Junction temperature | 150 | C | |||
| Tamb | Operating ambient temperature | 65 | +150 | C | ||
| Thermal Characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient (note 1) | SOT363 | 625 | K/W | ||
| SOT666 | 625 | K/W | ||||
| Rth(j-a) | Thermal resistance from junction to ambient (note 1, Per device) | SOT363 | 416 | K/W | ||
| SOT666 | 416 | K/W | ||||
| Characteristics | ||||||
| ICBO | Collector-base cut-off current (PNP) | VCB = 50 V; IE = 0 | 100 | nA | ||
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 | 1 | A | ||
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0; Tj = 150 C | 50 | A | ||
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 | 100 | nA | ||
| hFE | DC current gain | VCE = 5 V; IC = 1 mA | 200 | |||
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA | 100 | mV | ||
| R1 | Input resistor | 3.3 | 4.7 | 6.1 | k | |
| Cc | Collector capacitance | IE = Ie = 0; VCB = 10 V; f = 1 MHz | ||||
| Cc (TR1 NPN) | 2.5 | pF | ||||
| Cc (TR2 PNP) | 3 | pF | ||||
| Pin Description | PEMD6; PUMD6 |
|---|---|
| 1 | Emitter TR1 |
| 2 | Base TR1 |
| 3 | Collector TR2 |
| 4 | Emitter TR2 |
| 5 | Base TR2 |
| 6 | Collector TR1 |
2410121943_Nexperia-PUMD6-115_C455000.pdf
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