Vertical DMOS FET MICROCHIP TP2104N3 G with high input impedance and freedom from secondary breakdown
Key Attributes
Model Number:
TP2104N3-G
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
6Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 P-Channel
Pd - Power Dissipation:
740mW
Input Capacitance(Ciss):
60pF
Mfr. Part #:
TP2104N3-G
Package:
TO-92-3
Product Description
Product Overview
The TP2104 is a low-threshold, P-Channel Enhancement-Mode Vertical DMOS FET designed for a wide range of switching and amplifying applications. It features high input impedance, high gain, low-power drive requirements, and ease of paralleling. Its vertical DMOS structure and silicon-gate manufacturing process provide excellent thermal stability and freedom from secondary breakdown, making it ideal for logic-level interfaces, solid-state relays, analog switches, power management, and telecommunication switches.
Product Attributes
- Brand: Microchip Technology Inc.
- Product Code: TP2104
- Document Number: DS20005958A
- Copyright Year: 2020
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | BVDSS | 40 | V | VGS = 0V, ID = 1 mA | ||
| Drain-to-Gate Voltage | BVDGS | V | ||||
| Gate-to-Source Voltage | VGS | 20 | V | |||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| DC Electrical Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VGS = VDS, ID = 1 mA | |
| Change in VGS(th) with Temperature | VGS(th) | 5.8 | 6.5 | mV/C | VGS = VDS, ID = 1 mA (Note 1) | |
| Gate Body Leakage Current | IGSS | 1 | 100 | nA | VGS = 20V, VDS = 0V | |
| Zero-Gate Voltage Drain Current | IDSS | 10 | A | VGS = 0V, VDS = Maximum rating | ||
| 1 | mA | VDS = 0.8 Maximum rating, VGS = 0V, TA = 125C (Note 1) | ||||
| On-State Drain Current | ID(ON) | 0.6 | A | VGS = 10V, VDS = 25V | ||
| Static Drain-to-Source On-State Resistance | RDS(ON) | 10 | VGS = 4.5V, ID = 50 mA | |||
| 6 | VGS = 10V, ID = 500 mA | |||||
| Change in RDS(ON) with Temperature | RDS(ON) | 0.55 | 1 | %/C | VGS = 10V, ID = 500 mA (Note 1) | |
| AC Electrical Characteristics | ||||||
| Forward Transconductance | GFS | 150 | 200 | mmho | VDS = 25V, ID = 500 mA | |
| Input Capacitance | CISS | 35 | 60 | pF | VGS = 0V, VDS = 25V, f = 1 MHz | |
| Common Source Output Capacitance | COSS | 22 | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | 8 | 10 | pF | ||
| Turn-On Delay Time | td(ON) | 4 | 6 | ns | VDD = 25V, ID = 500 mA, RGEN = 25 | |
| Rise Time | tr | 4 | 8 | ns | ||
| Turn-Off Delay Time | td(OFF) | 5 | 9 | ns | ||
| Fall Time | tf | 5 | 8 | ns | ||
| Diode Parameter | ||||||
| Diode Forward Voltage Drop | VSD | 1.2 | 2 | V | VGS = 0V, ISD = 500 mA (Note 1) | |
| Reverse Recovery Time | trr | 400 | ns | VGS = 0V, ISD = 500 mA | ||
| Temperature Specifications | ||||||
| Operating Ambient Temperature | TA | 55 | +150 | C | ||
| Storage Temperature | TS | 55 | +150 | C | ||
| Package Thermal Resistance | ||||||
| 3-lead SOT-23 | JA | 203 | C/W | |||
| 3-lead TO-92 | JA | 132 | C/W | |||
| Thermal Characteristics | ||||||
| Package | ID (Continuous) (mA) | ID (Pulsed) (mA) | Power Dissipation at TA = 25C (W) | IDR (Note 1) (mA) | IDRM (mA) | |
| 3-lead SOT-23 | 160 | 800 | 0.36 | 160 | 800 | |
| 3-lead TO-92 | 175 | 1000 | 0.74 | 175 | 1000 | |
2410121918_MICROCHIP-TP2104N3-G_C632588.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
General purpose NPN transistor YANGJIE BCX56 with tin plated leads and low saturation voltage
Product OverviewThe BCX56 is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features a low collector-emitter saturation voltage and is housed in a SOT-89 package with UL-94 V-0 flammability rating. Halogen-free options are available upon request. This ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
