Power MOSFET Minos MPG190N06P 190A 60V with High Density Cell Design and Effective Heat Dissipation
Key Attributes
Model Number:
MPG190N06P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Number:
1 N-channel
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
8.2nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
186nC
Mfr. Part #:
MPG190N06P
Package:
TO-220
Product Description
Product Description
The MPG190N06 is an N-Channel Power MOSFET utilizing advanced trench technology to achieve excellent RDS(ON) and low gate charge. This design enables its use in a wide variety of applications, including power switching, hard-switched and high-frequency circuits, and uninterruptible power supplies. Key advantages include a high-density cell design for lower Rdson, fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The package is designed for effective heat dissipation.
Product Attributes
- Brand: www.mns-kx.com
- Origin: Shenzhen Minos ()
Technical Specifications
| Product Code | Package | VDS (V) | ID (A) | RDS(ON) (m) @ VGS=10V | EAS (mJ) | PD (W) | RJC (/W) |
| MPG190N06-P | TO-220 | 60 | 190 | <4 | 1000 | 210 | 0.7 |
| MPG190N06-S | TO-263 | 60 | 190 | <4 | 1000 | 210 | 0.7 |
2410171638_Minos-MPG190N06P_C41433063.pdf
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