Low threshold voltage P channel transistor MICROCHIP TP0606N3-G with fast switching speeds and low input capacitance
Supertex TP0606 P-Channel Enhancement-Mode Vertical DMOS FET
The Supertex TP0606 is a low threshold, P-channel, enhancement-mode (normally-off) transistor utilizing a vertical DMOS structure. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for a wide range of switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Key features include a low threshold voltage of -2.4V max., high input impedance, low input capacitance (80pF typ.), fast switching speeds, low on-resistance, and freedom from secondary breakdown. It is well-suited for logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general-purpose line drivers, and telecom switches.
Product Attributes
- Brand: Supertex inc.
- Origin: Sunnyvale, CA 94089
- Certifications: RoHS compliant (Green) for packaged and die forms.
Technical Specifications
| Device | BVDSS/BVDGS (V) | RDS(ON) (max) () | ID(ON) (min) (A) | VGS(th) (max) (V) | Package |
|---|---|---|---|---|---|
| TP0606N3-G | -60 | 3.5 | -1.5 | -2.4 | TO-92 |
| Parameter | Min | Typ | Max | Units | Conditions |
|---|---|---|---|---|---|
| BVDSS | -60 | - | - | V | VGS = 0V, ID = -2.0mA |
| VGS(th) | -1.0 | - | -2.4 | V | VGS = VDS, ID= -1.0mA |
| VGS(th) | - | - | -5.0 | mV/C | VGS = VDS, ID= -1.0mA |
| IGSS | - | - | -100 | nA | VGS = 20V, VDS = 0V |
| IDSS | - | - | -10 | A | VGS = 0V, VDS = Max Rating |
| IDSS (at 125C) | - | - | -1.0 | mA | VDS = 0.8 Max Rating, VGS = 0V, TA = 125C |
| ID(ON) (VGS = -5.0V) | -0.4 | -0.6 | - | A | VGS = -5.0V, VDS = -25V |
| ID(ON) (VGS = -10V) | -1.5 | -2.5 | - | A | VGS = -10V, VDS = -25V |
| RDS(ON) (VGS = -5.0V) | - | 5.0 | 7.0 | VGS = -5.0V, ID = -250mA | |
| RDS(ON) (VGS = -10V) | - | 3.0 | 3.5 | VGS = -10V, ID = -750mA | |
| RDS(ON) | - | - | 1.7 | %/C | VGS = -10V, ID = -750mA |
| GFS | 300 | 400 | - | mmho | VDS = -25V, ID = -750mA |
| CISS | - | 80 | 150 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| COSS | - | 50 | 85 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| CRSS | - | 15 | 35 | pF | VGS = 0V, VDS = -25V, f = 1.0MHz |
| td(ON) | - | - | 10 | ns | VDD = -25V, ID = -1.0A, RGEN = 25 |
| tr | - | - | 15 | ns | VDD = -25V, ID = -1.0A, RGEN = 25 |
| td(OFF) | - | - | 20 | ns | VDD = -25V, ID = -1.0A, RGEN = 25 |
| tf | - | - | 15 | ns | VDD = -25V, ID = -1.0A, RGEN = 25 |
| VSD | - | - | -1.8 | V | VGS = 0V, ISD = -1.0A |
| trr | - | - | 300 | ns | VGS = 0V, ISD = -1.0A |
2410121503_MICROCHIP-TP0606N3-G_C632586.pdf
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