Low threshold voltage P channel transistor MICROCHIP TP0606N3-G with fast switching speeds and low input capacitance

Key Attributes
Model Number: TP0606N3-G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
2.4V
Reverse Transfer Capacitance (Crss@Vds):
15pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
80pF
Mfr. Part #:
TP0606N3-G
Package:
TO-92
Product Description

Supertex TP0606 P-Channel Enhancement-Mode Vertical DMOS FET

The Supertex TP0606 is a low threshold, P-channel, enhancement-mode (normally-off) transistor utilizing a vertical DMOS structure. It offers the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. This device is free from thermal runaway and thermally-induced secondary breakdown, making it ideal for a wide range of switching and amplifying applications requiring very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Key features include a low threshold voltage of -2.4V max., high input impedance, low input capacitance (80pF typ.), fast switching speeds, low on-resistance, and freedom from secondary breakdown. It is well-suited for logic level interfaces (TTL and CMOS), solid-state relays, battery-operated systems, photovoltaic drives, analog switches, general-purpose line drivers, and telecom switches.

Product Attributes

  • Brand: Supertex inc.
  • Origin: Sunnyvale, CA 94089
  • Certifications: RoHS compliant (Green) for packaged and die forms.

Technical Specifications

Device BVDSS/BVDGS (V) RDS(ON) (max) () ID(ON) (min) (A) VGS(th) (max) (V) Package
TP0606N3-G -60 3.5 -1.5 -2.4 TO-92
Parameter Min Typ Max Units Conditions
BVDSS -60 - - V VGS = 0V, ID = -2.0mA
VGS(th) -1.0 - -2.4 V VGS = VDS, ID= -1.0mA
VGS(th) - - -5.0 mV/C VGS = VDS, ID= -1.0mA
IGSS - - -100 nA VGS = 20V, VDS = 0V
IDSS - - -10 A VGS = 0V, VDS = Max Rating
IDSS (at 125C) - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125C
ID(ON) (VGS = -5.0V) -0.4 -0.6 - A VGS = -5.0V, VDS = -25V
ID(ON) (VGS = -10V) -1.5 -2.5 - A VGS = -10V, VDS = -25V
RDS(ON) (VGS = -5.0V) - 5.0 7.0 VGS = -5.0V, ID = -250mA
RDS(ON) (VGS = -10V) - 3.0 3.5 VGS = -10V, ID = -750mA
RDS(ON) - - 1.7 %/C VGS = -10V, ID = -750mA
GFS 300 400 - mmho VDS = -25V, ID = -750mA
CISS - 80 150 pF VGS = 0V, VDS = -25V, f = 1.0MHz
COSS - 50 85 pF VGS = 0V, VDS = -25V, f = 1.0MHz
CRSS - 15 35 pF VGS = 0V, VDS = -25V, f = 1.0MHz
td(ON) - - 10 ns VDD = -25V, ID = -1.0A, RGEN = 25
tr - - 15 ns VDD = -25V, ID = -1.0A, RGEN = 25
td(OFF) - - 20 ns VDD = -25V, ID = -1.0A, RGEN = 25
tf - - 15 ns VDD = -25V, ID = -1.0A, RGEN = 25
VSD - - -1.8 V VGS = 0V, ISD = -1.0A
trr - - 300 ns VGS = 0V, ISD = -1.0A

2410121503_MICROCHIP-TP0606N3-G_C632586.pdf

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