power MOSFET Minos IRFB7545-MNS featuring low RDS ON and high avalanche energy for switching devices
Key Attributes
Model Number:
IRFB7545-MNS
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
270pF
Number:
1 N-channel
Output Capacitance(Coss):
345pF
Pd - Power Dissipation:
143W
Input Capacitance(Ciss):
3.7nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
IRFB7545-MNS
Package:
TO-220
Product Description
Product Overview
The IRFB7545-MNS is a MOSFET utilizing advanced trench technology, offering excellent RDS(ON) and low gate charge. It is designed for a wide range of power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. Key advantages include high ESD capability, a high-density cell design for lower Rdson, and fully characterized avalanche voltage and current for good stability and uniformity.
Product Attributes
- Brand: MNS
- Package: TO-220
- Origin: Shenzhen, China (implied by contact information)
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain Current-Continuous | ID | 120 | A | |||
| Drain Current-Pulsed | IDM | (Note 1) | 380 | A | ||
| Maximum Power Dissipation | PD | (Tc=25) | 143 | W | ||
| Single pulse avalanche energy | EAS | (Note 2) | 260 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance,Junction-to-Case | RθJC | 1.05 | /W | |||
| Thermal Resistance,Junction-to-Ambient | RθJA | 62.5 | /W | |||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 2 | 2.8 | 4 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=30A (Note 3) | 6.0 | 7.0 | mΩ | |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 15 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=30V,VGS=0V, f=1.0MHz | 3700 | pF | ||
| Output Capacitance | Coss | 345 | pF | |||
| Reverse Transfer Capacitance | Crss | 270 | pF | |||
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V,ID=30A, VGS=10V,RGEN=3Ω | 19 | nS | ||
| Turn-on Rise Time | tr | 36 | nS | |||
| Turn-Off Delay Time | td(off) | 45 | nS | |||
| Turn-Off Fall Time | tf | 24 | nS | |||
| Total Gate Charge | Qg | VDS=48V,ID=30A VGS=10V | 80 | nC | ||
| Gate-Source Charge | Qgs | 25 | nC | |||
| Gate-Drain Charge | Qg d | 22 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=1A | 1.2 | V | ||
2412110943_Minos-IRFB7545-MNS_C42411363.pdf
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