Power MOSFET Minos MPG160N04P with 40V Breakdown Voltage and 175 Degree Maximum Junction Temperature
Key Attributes
Model Number:
MPG160N04P
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-
RDS(on):
2.5mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
2.7V
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.315nF@25V
Pd - Power Dissipation:
200W
Gate Charge(Qg):
47nC@10V
Mfr. Part #:
MPG160N04P
Package:
TO-220
Product Description
Product Overview
The MPG160N04 is a high-performance N-Channel Power MOSFET utilizing advanced technology and design to deliver excellent RDS(ON). It is suitable for a wide range of power switching applications, including adapters and chargers, offering low ON resistance and low reverse transfer capacitances. The device undergoes 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: MNS
- Origin: Shenzhen Minos Technology Co., Ltd.
- Material: Silicon N-Channel
- Certifications: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
| Limited Parameters | |||||
| VDS (Drain-to-Source Breakdown Voltage) | 40 | V | |||
| ID (Drain Current, continuous) | Tc=25 | 160 | A | ||
| IDM (Drain Current, Pulsed) | 640 | A | |||
| VGS (Gate to Source Voltage) | 30 | V | |||
| Ptot (Total Dissipation) | Tc=25 | 200 | W | ||
| Tj Max. (Operating Junction Temperature) | 175 | ||||
| Eas (Single Pulse Avalanche Energy) | 700 | mJ | |||
| Electrical Parameters | |||||
| VDS (Drain-source Voltage) | VGS=0V, ID=250A | 40 | V | ||
| RDS(on) (Static Drain-to-Source on-Resistance) | VGS=10V, ID=50A | 2.5 | 3.5 | m | |
| VGS(th) (Gated Threshold Voltage) | VDS=VGS, ID=250A | 2.0 | 2.7 | 3.2 | V |
| IDSS (Drain to Source leakage Current) | VDS=40V, VGS= 0V | 1.0 | A | ||
| IGSS(F) (Gated Body Foward Leakage) | VGS= +20V | 100 | nA | ||
| IGSS(R) (Gated Body Reverse Leakage) | VGS= -20V | -100 | nA | ||
| Ciss (Input Capacitance) | VGS=0V, VDS=25V, f=1.0MHZ | 3315 | pF | ||
| Coss (Output Capacitance) | 230 | pF | |||
| Crss (Reverse Transfer Capacitance) | 18 | pF | |||
| Switching Characteristics | |||||
| td(on) (Turn-on Delay Time) | VDD=20V,ID=50A, RG=10 | 34 | nS | ||
| tr (Turn-on Rise Time) | 26 | nS | |||
| td(off) (Turn-off Delay Time) | 72 | nS | |||
| tf (Turn-off Fall Time) | 39 | nS | |||
| Qg (Total Gate Charge) | VDS=20V ID=50A VGS=10V | 47 | nC | ||
| Qgs (Gate-Source Charge) | 11.2 | nC | |||
| Qgd (Gate-Drain Charge) | 19 | nC | |||
| Source-Drain Diode Characteristics | |||||
| ISD (S-D Current, Body Diode) | 160 | A | |||
| ISDM (Pulsed S-D Current, Body Diode) | 640 | A | |||
| VSD (Diode Forward Voltage) | VGS=0V, IDS=100A | 1.5 | V | ||
| trr (Reverse Recovery Time) | TJ=25,IF=100A, di/dt=100A/us | 555 | nS | ||
| Qrr (Reverse Recovery Charge) | 4550 | C | |||
| Thermal Characteristics | |||||
| RJC (Junction-to-Case) | 2.5 | /W | |||
2410122013_Minos-MPG160N04P_C7587855.pdf
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