Surface mount MICROCHIP MV2N5114UBTR P CHANNEL J FET with MIL PRF 19500 screening and RoHS compliance
Key Attributes
Model Number:
MV2N5114UB/TR
Product Custom Attributes
Ciss-Input Capacitance:
25pF@15V
Operating Temperature:
-65℃~+200℃@(Tj)
Pd - Power Dissipation:
500mW
Drain Current (Idss):
30mA@18V
FET Type:
-
RDS(on):
75Ω
Gate-Source Breakdown Voltage (Vgss):
30V
Gate-Source Cutoff Voltage (VGS(off)):
5V@1nA
Mfr. Part #:
MV2N5114UB/TR
Package:
SMD-3P
Product Description
Product Overview
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. RoHS compliant versions are available for commercial grade applications. It is suitable for applications benefiting from its low-profile and lightweight characteristics.
Product Attributes
- Brand: Microsemi Corporation
- Package: UB Package (Surface Mount), TO-18 package (Leaded)
- Material: Ceramic case with Gold Plating over Nickel underplate terminals. RoHS compliant Matte/Tin available on commercial grade only.
- Certifications: Screening in reference to MIL-PRF-19500 available.
Technical Specifications
| Model | Gate-Source Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A | Drain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA (VGS=0) | Gate Reverse Current (IGSS) @ VDS = 0, VGS = 20 V | Drain Current Cutoff (ID(off)) @ VGS = 12 V, VDS = -15 V | Zero Gate Voltage Drain Current (IDSS) @ VGS = 0, VDS = -18V | Gate-Source Cutoff (VGS(off)) @ VDS = -15, ID = -1.0 nA | Small-Signal Drain-Source "On" State Resistance (rds(on)1) @ VGS = 0, ID = -1.0 mA | Small-Signal Drain-Source "On" State Resistance (rds(on)2) @ VGS = 0, ID = 0; f = 1 kHz | Small-Signal, Common-Source Short-Circuit Reverse Transfer Capacitance (Crss) @ VGS = 12 V, VDS = 0 | Small-Signal, Common-Source Short-Circuit Input Capacitance (Ciss) @ VGS = 0, VDS = -15 V, f = 1.0 MHz | Turn-On Delay Time (Td(on)) | Rise Time (tr) | Turn-Off Delay Time (Td(off)) |
| 2N5114UB | 30 V | -1.3 V | 500 pA | -500 pA | -30 mA | 5.0 V | 75 | 75 | 7.0 pF | 25 pF | 6 s | 10 s | 6 s |
| 2N5115UB | 30 V | -0.8 V | 500 pA | -500 pA | -15 mA | 3.0 V | 100 | 100 | 7.0 pF | 25 pF | 10 s | 20 s | 8 s |
| 2N5116UB | 30 V | -0.6 V | 500 pA | -500 pA | -5.0 mA | 1.0 V | 175 | 175 | 7.0 pF | 27 pF | 25 s | 35 s | 20 s |
2410311704_MICROCHIP-MV2N5114UB-TR_C17385789.pdf
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