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quality Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package factory
quality Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package factory

Nexperia PUMD2 115 double transistor NPN PNP resistor equipped with bias resistors in SOT363 package

Key Attributes
Model Number: PUMD2,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
22kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD2,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD2 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a single SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This device is suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage open base [1] - - 50 V
IO Output current [1] - - 100 mA
R1 Bias resistor 1 (input) [2] 15.4 22 28.6 k
R2/R1 Bias resistor ratio [2] 0.8 1 1.2 -
VCBO Collector-base voltage open emitter [1] - - 50 V
VEBO Emitter-base voltage open collector [1] - - 10 V
VI (TR1 NPN) Input voltage -10 - 40 V
VI (TR2 PNP) Input voltage -40 - 10 V
Ptot Total power dissipation Tamb 25 C [2] - - 200 mW
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 625 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C [1] 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C [1] 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C [1] - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C [1] - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C [1] - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C [1] - - 180 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C [1] 60 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C [1] - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C [1] - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 5 mA; Tamb = 25 C 2.5 1.7 - V
Cc (TR1 NPN) Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT (TR1 NPN) Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [3] - 230 - MHz
Cc (TR2 PNP) Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT (TR2 PNP) Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [3] - 180 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [2] - - 300 mW
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 417 K/W
General
R1 Bias resistor 1 (input) [2] 15.4 22 28.6 k
R2/R1 Bias resistor ratio [2] 0.8 1 1.2 -
Package TSSOP6 (SOT363)
Body dimensions 2.1 x 1.25 x 0.95 mm
Pitch 0.65 mm

[1] For the PNP transistor with negative polarity.

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[3] Characteristics of built-in transistor.


2504101957_Nexperia-PUMD2-115_C426874.pdf

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