86--136 6733 2386
quality Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt 349 Amp Full SiC Module factory
quality Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt 349 Amp Full SiC Module factory

Triple Phase Silicon Carbide Power Module MICROCHIP MSCSM70TAM05TPAG 700 Volt 349 Amp Full SiC Module

Key Attributes
Model Number: MSCSM70TAM05TPAG
Product Custom Attributes
Mfr. Part #:
MSCSM70TAM05TPAG
Product Description

Product Overview

The MSCSM70TAM05TPAG is a triple phase leg 700 V/349 A full silicon carbide (SiC) power module. It offers low RDS(on), high-speed switching, and ultra-low loss with very low stray inductance and a Kelvin source for easy drive. An internal thermistor provides temperature monitoring, and the Aluminum Nitride (AlN) substrate enhances thermal performance. This module enables high-efficiency converters, outstanding performance at high-frequency operation, and direct mounting to heatsinks due to its isolated package and low junction-to-case thermal resistance. Solderable terminals facilitate easy PCB mounting. It is designed for applications such as uninterruptible power supplies, switched-mode power supplies, EV motor and traction drives, and welding converters.

Product Attributes

  • Brand: Microsemi
  • Material: Silicon Carbide (SiC), Aluminum Nitride (AlN)
  • Certifications: RoHS compliant

Technical Specifications

ParameterSymbolUnitMinTypMaxTest Conditions
SiC MOSFET Characteristics (Per MOSFET)
Drain-source voltageVDSSV700
Continuous drain currentIDA278349TC = 80 C, TC = 25 C
Pulsed drain currentIDMA700
Gate-source voltageVGSV-1025
Drain-source ON resistanceRDS(on)m56.4TJ = 25 C, VGS = 20 V, ID = 120 A
Drain-source ON resistanceRDS(on)m6.3TJ = 175 C, VGS = 20 V, ID = 120 A
Power dissipationPDW966TC = 25 C
Zero gate voltage drain currentIDSSA300VGS = 0 V, VDS = 700 V
Gate threshold voltageVGS(th)V1.92.4VGS = VDS, ID = 12 mA
Gate-source leakage currentIGSSnA300VGS = 20 V, VDS = 0 V
Input capacitanceCissnF13.5VGS = 0 V, VDS = 700 V, f = 1 MHz
Output capacitanceCossnF1.5VGS = 0 V, VDS = 700 V, f = 1 MHz
Reverse transfer capacitanceCrssnF0.09VGS = 0 V, VDS = 700 V, f = 1 MHz
Total gate chargeQgnC174645VGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Gate-source chargeQgsnC105VGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Gate-drain chargeQgdnCVGS = 5 V/20 V, VBus = 470 V, ID= 120 A
Turn-on delay timeTd(on)ns3540VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Rise timeTrns50VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Turn-off delay timeTd(off)ns20VGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Fall timeTfnsVGS = 5 V/20 V, VBus = 400 V, ID = 240 A; TJ = 150 C, RGon = 9 ; RGoff = 1.6
Turn on energyEonmJ0.561.96TJ = 150 C, VBus = 400 V, ID = 160 A, RGon = 9 , RGoff = 1.6
Turn off energyEoffmJTJ = 150 C, VBus = 400 V, ID = 160 A, RGon = 9 , RGoff = 1.6
Internal gate resistanceRGint1.9
Junction-to-case thermal resistanceRthJCC/W0.155
Body Diode Ratings and Characteristics (Per SiC MOSFET)
Diode forward voltageVSDV3.43.8VGS = 0 V; ISD = 120 A, VGS = 5V ; ISD = 120 A
Reverse recovery timetrrns38ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Reverse recovery chargeQrrnC954ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Reverse recovery currentIrrA44ISD = 120 A; VGS = 5 V, VR = 400 V; diF/dt = 3000 A/s
Thermal and Package Characteristics
RMS isolation voltage, any terminal to caseVISOLV4000t = 1 min, 50 Hz/60 Hz
Operating junction temperature rangeTJC-40175
Recommended junction temperature under switching conditionsTJOPC-40125
Storage temperature rangeTSTGC-40125
Operating case temperatureTCC-40125
Mounting torqueN.m35M6 To heatsink
Package weightWtg250
Temperature Sensor NTC
Resistance at 25 CR25k50
B25/853952

2411272101_MICROCHIP-MSCSM70TAM05TPAG_C3615359.pdf

Related Products
quality NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency factory
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation factory
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.